High-voltage normally off GaN MOSFETs on sapphire substrates by Matocha, K., Chow, T.P., Gutmann, R.J.

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Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers by Tilak, V., Matocha, K., Dunne, G.

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On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs by Moens, P., Geenen, F., Avramenko, M., Gomez-Garcia, G., Matocha, K.

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Time-Dependent Dielectric Breakdown of 4H-SiC MOS Capacitors and DMOSFETs by Matocha, K., Dunne, G., Soloviev, S., Beaupre, R.

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Evaluation of ductile-brittle transition temperature of anisotropy material by small punch test with U-shaped notch by Guan, K., Wang, D., Dobrovska, J., Matocha, K.

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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation by Tilak, V., Matocha, K., Dunne, G., Allerstam, F., Sveinbjornsson, E.O.

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Manufacturable and rugged 1.2 KV SiC MOSFETs fabricated in high-volume 150mm CMOS fab by Banerjee, S., Matocha, K., Chatty, K., Nowak, J., Powell, B., Gutierrez, D., Hundley, C.

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Effect of annealing on GaN-insulator interfaces characterized by metal-insulator-semiconductor capacitors by Matocha, K., Gutmann, R.J., Chow, T.P.

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European standard on small punch testing of metallic materials by Bruchhausen, M., Altstadt, E., Austin, T., Dymacek, P., Holmström, S., Jeffs, S., Lacalle, R., Lancaster, R., Matocha, K., Petzova, J.

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Chemical characterization of SiO2/SiC interface after nitridation treatment by Hu, Y.F., Piao, H., Fronheiser, J., Matocha, K.

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Comment on A. Agarwal and S. Haney, “Some Critical Materials and Processing Issues in SiC Power Devices” [J. Electron. Mater. 37, 646 (2008)] by Tilak, V., Matocha, K.

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Influence of test method used to evaluate resistance of C-Mn steel to hydrogen induced cracking by Jonšta, P., Matocha, K., Jonšta, Z., Koštial, P., Jancíková, Z.

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Positive flatband voltage shift in MOS capacitors on n-type GaN by Matocha, K., Chow, T.P., Gutmann, R.J.

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SiC and GaN bipolar power devices by Chow, T.P., Khemka, V., Fedison, J., Ramungul, N., Matocha, K., Tang, Y., Gutmann, R.J.

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Silicon carbide photodiode sensor for combustion control by Brown, D.M., Fedison, J.B., Hibshman, J.R., Kretchmer, J.W., Lombardo, L., Matocha, K.S., Sandvik, P.M.

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3.3kV SiC MOSFETs designed for low on-resistance and fast switching by Bolotnikov, A., Losee, P., Matocha, K., Glaser, J., Nasadoski, J., Lei Wang, Elasser, A., Arthur, S., Stum, Z., Sandvik, P., Sui, Y., Johnson, T., Sabate, J., Stevanovic, L.

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Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications by Glaser, J S, Nasadoski, J J, Losee, P A, Kashyap, A S, Matocha, K S, Garrett, J L, Stevanovic, L D

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Chemical characterization of SiO sub(2)/SiC interface after nitridation treatment by Hu, Y F, Piao, H, Fronheiser, J, Matocha, K

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Influence of test method used to evaluate resistance of C-Mn steel to hydrogen induced cracking; Einfluss der verwendeten Testmethode zur Bewertung des Widerstands von C-Mn-Stahl g... by Jonsta, P, Matocha, K, Jonsta, Z, Kostial, P, Jancíková, Z

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Chemical characterization of SiO 2/SiC interface after nitridation treatment by Hu, Y.F., Piao, H., Fronheiser, J., Matocha, K.

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