Search Results - Mazumder, Motaharul Kabir

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  1. 1
    Ag Diffusion in Low-k Materials (BCN and SiOC) and Its Challenges for Future Interconnection

    Ag Diffusion in Low-k Materials (BCN and SiOC) and Its Challenges for Future Interconnection by Mazumder, Motaharul Kabir, Moriyama, Ryota, Watanabe, Daisuke, Kimura, Chiharu, Aoki, Hidemitsu, Sugino, Takashi

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  2. 2
    Negative stress-induced current in oxidized nitride layers of different nitride thicknesses (<5 nm)

    Negative stress-induced current in oxidized nitride layers of different nitride thicknesses (<5 nm) by Kabir Mazumder, Motaharul, Kobayashi, Kiyoteru, Mashiko, Yoji, Koyama, Hiroshi

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  3. 3
    Atmospheric photoassisted chemical vapor deposition of Si using ultraviolet-light irradiated H2 carrier gas and nonexcited SiH2Cl2

    Atmospheric photoassisted chemical vapor deposition of Si using ultraviolet-light irradiated H2 carrier gas and nonexcited SiH2Cl2 by MOTAHARUL KABIR MAZUMDER, TAKAKUWA, Y, MIYAMOTO, N

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  4. 4
    Pt/Ba x Sr (1-x) TiO 3 /Pt Capacitor Technology for 0.15 µm Embedded Dynamic Random Access Memory

    Pt/Ba x Sr (1-x) TiO 3 /Pt Capacitor Technology for 0.15 µm Embedded Dynamic Random Access Memory by Tsunemine, Yoshikazu, Okudaira, Tomonori, Kashihara, Keiichiro, Yutani, Akie, Shinkawata, Hiroki, Mazumder, Motaharul Kabir, Ohno, Yoshikazu, Yoneda, Masahiro, Okuno, Yasutoshi, Tsuzumitani, Akihiko, Ogawa, Hisashi, Mori, Yoshihiro

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  5. 5
    Pt/BaxSr(1-x)TiO3/Pt CAPACITOR TECHNOLOGY FOR 0.15 MU M EMBEDDED DYNAMIC RANDOM ACCESS MEMORY

    Pt/BaxSr(1-x)TiO3/Pt CAPACITOR TECHNOLOGY FOR 0.15 MU M EMBEDDED DYNAMIC RANDOM ACCESS MEMORY by Tsunemine, Y, Okudaira, T, Kashihara, K, Yutani, A, Shinkawata, H, Mazumder, M K

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  6. 6
    Surface adsorbate related nucleation of crystallographic defect in chemical vapor deposition of silicon with dichlorosilane

    Surface adsorbate related nucleation of crystallographic defect in chemical vapor deposition of silicon with dichlorosilane by Takakuwa, Yuji, Mazumder, Motaharul Kabir, Miyamoto, Nobuo

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  7. 7
    Growth Defect Observation with Pyramidal Hillock and Reduction by Photoexcited Hydrogen in Si CVD with SiH2Cl2

    Growth Defect Observation with Pyramidal Hillock and Reduction by Photoexcited Hydrogen in Si CVD with SiH2Cl2 by Takakuwa, Yuji, Mazumder, Motaharul Kabir, Miyamoto, Nobuo

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  8. 8
    Surface adsorbate related nucleation of crystallographic defect in chemical vapor deposition of silicon with dichlorosilane

    Surface adsorbate related nucleation of crystallographic defect in chemical vapor deposition of silicon with dichlorosilane by TAKAKUWA, Y, MOTAHARUL KABIR MAZUMDER, MIYAMOTO, N

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  9. 9
    Improved reliability of wet oxidized nitride MOS capacitors in comparison to RTP N 2O oxidized nitride films

    Improved reliability of wet oxidized nitride MOS capacitors in comparison to RTP N 2O oxidized nitride films by Mazumder, Motaharul Kabir, Kobayashi, Kiyoteru, Ogata, Tamotsu, Mitsuhashi, Jun-Ichi, Mashiko, Yoji, Kawazu, Satoru, Sekine, Masahiro, Koyama, Hiroshi, Yasuoka, Akihiko

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  10. 10
    Improved reliability of wet oxidized nitride MOS capacitors in comparison to RTP N2O oxidized nitride films

    Improved reliability of wet oxidized nitride MOS capacitors in comparison to RTP N2O oxidized nitride films by Mazumder, Motaharul Kabir, Kobayashi, Kiyoteru, Ogata, Tamotsu, Mitsuhashi, Jun-Ichi, Mashiko, Yoji, Kawazu, Satoru, Sekine, Masahiro, Koyama, Hiroshi, Yasuoka, Akihiko

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