Search Results - McFelea, H.

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  1. 1
    Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0 0 0 1) sapphire

    Direct observation of formation of threading dislocations from stacking faults in GaN layer grown on (0 0 0 1) sapphire by Meng, F.Y., Han, I., McFelea, H., Lindow, E., Bertram, R., Werkhoven, C., Arena, C., Mahajan, S.

    Published in Scripta materialia
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  2. 2
    Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN

    Origin of predominantly a type dislocations in InGaN layers and wells grown on (0001) GaN by Meng, F. Y., McFelea, H., Datta, R., Chowdhury, U., Werkhoven, C., Arena, C., Mahajan, S.

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  3. 3
    Structural evolution of GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy

    Structural evolution of GaN layers grown on (0 0 0 1) sapphire by hydride vapor phase epitaxy by Meng, F.Y., Han, I., McFelea, H., Lindow, E., Bertram, R., Werkhoven, C., Arena, C., Mahajan, S.

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  4. 4
    Sapphire surface pits as sources of threading dislocations in hetero-epitaxial GaN layers

    Sapphire surface pits as sources of threading dislocations in hetero-epitaxial GaN layers by Meng, F.Y., Han, I., McFelea, H., Lindow, E., Bertram, R., Werkhoven, C., Arena, C., Mahajan, S.

    Published in Scripta materialia
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