Search Results - Meidia, H

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  1. 1
    Reduction of threading dislocations in GaN layers using in situ deposited silicon nitride masks on AlN and GaN nucleation layers

    Reduction of threading dislocations in GaN layers using in situ deposited silicon nitride masks on AlN and GaN nucleation layers by Fang, X. L., Wang, Y. Q., Meidia, H., Mahajan, S.

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  2. 2
    Thermal stability of TaN Schottky contacts on n-GaN

    Thermal stability of TaN Schottky contacts on n-GaN by Hayes, J.R, Kim, D-W, Meidia, H, Mahajan, S

    Published in Acta materialia
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  3. 3
    Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM

    Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM by Meidia, H., Cullis, A.G., Schönjahn, C., Münz, W.D., Rodenburg, J.M.

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  4. 4
    Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition

    Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition by Fleischmann, T., Moran, M., Hopkinson, M., Meidia, H., Rees, G. J., Cullis, A. G., Sánchez-Rojas, J. L., Izpura, I.

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  5. 5
    Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy

    Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy by Moran, M, Meidia, H, Fleischmann, T, Norris, D J, Rees, G J, Cullis, A G, Hopkinson, M

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  6. 6
    Influence of LT-AlN buffer layers on density of threading dislocation in AlGaN layers

    Influence of LT-AlN buffer layers on density of threading dislocation in AlGaN layers by Meidia, H., Mahajan, S.

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  7. 7
    Monitoring thickness changes in GaAs/AlAs partial VCSEL Bragg reflector stacks using optical spectroscopic, x-ray and electron microscopic methods

    Monitoring thickness changes in GaAs/AlAs partial VCSEL Bragg reflector stacks using optical spectroscopic, x-ray and electron microscopic methods by Thomas, P J S, Hosea, T J C, Lancefield, D, Meidia, H

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  8. 8
    Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM

    Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM by Meidia, H, Cullis, A G, Schonjahn, C, Munz, W D, Rodenburg, J M

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  9. 9
    Indium segregation in (111)B GaAs-In x Ga 1- x As quantum wells determined by transmission electron microscopy

    Indium segregation in (111)B GaAs-In x Ga 1- x As quantum wells determined by transmission electron microscopy by Moran, M, Meidia, H, Fleischmann, T, Norris, D J, Rees, G J, Cullis, A G, Hopkinson, M

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  10. 10
    Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy

    Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy by Ding, Y., Park, K.-B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B. J., Meidia, H., Mahajan, S.

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  11. 11
    Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM

    Investigation of intermixing in TiAlN/VN nanoscale multilayer coatings by energy-filtered TEM by MEIDIA, H, CULLIS, A. G, SCHÖNJAHN, C, MÜNZ, W. D, RODENBURG, J. M

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  12. 12
    Quantum well state of self-forming 3 C − SiC inclusions in 4 H SiC determined by ballistic electron emission microscopy

    Quantum well state of self-forming 3 C − SiC inclusions in 4 H SiC determined by ballistic electron emission microscopy by Ding, Y., Park, K.-B., Pelz, J. P., Palle, K. C., Mikhov, M. K., Skromme, B. J., Meidia, H., Mahajan, S.

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