The effects of boron penetration on p/sup +/ polysilicon gated PMOS devices by Pfiester, J.R., Baker, F.K., Mele, T.C., Tseng, H.-H., Tobin, P.J., Hayden, J.D., Miller, J.W., Gunderson, C.D., Parrillo, L.C.

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Re-evaluation of the benefits of postoxidation annealing on sub-100 /spl Aring/ gate oxide quality by Ajuria, S.A., Maiti, B., Tobin, P.J., Mele, T.C.

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Comparison of surface charge analysis and MOS C-V as techniques for ionic impurity detection in Si/SiO[sub 2] structures by Ajuria, S.A., Fitch, J.T., Workman, D., Mele, T.C.

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Use of screening and response surface experimental designs for development of a 0.5- mu m CMOS self-aligned titanium silicide process by Jones, R.E., Mele, T.C.

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A high-performance 0.5- mu m BiCMOS technology for fast 4-Mb SRAMs by Hayden, J.D., Mele, T.C., Perera, A.H., Burnett, D., Walczyk, F.W., Lage, C.S., Baker, F.K., Woo, M., Paulson, W., Lien, M., See, Y.-C., Denning, D., Cosentino, S.J.

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Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's by Hayden, J.D., Burnett, J.D., Perera, A.K., Mele, T.C., Walczyk, F.W., Kaushik, V., Lage, C.S., See, Y.-C.

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A cobalt salicide CMOS process with TiN-strapped polysilicon gates by Pfiester, J.R., Mele, T.C., Limb, Y., Jones, R.E., Woo, M., Boeck, B., Gunderson, C.D.

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A high-performance half-micrometer generation CMOS technology for fast SRAMs by Hayden, J.D., Baker, F.K., Ernst, S.A., Jones, R.E., Klein, J., Lien, M., McNelly, T.F., Mele, T.C., Mendez, H., Nguyen, B.-Y., Parrillo, L.C., Paulson, W., Pfiester, J.R., Pintchovski, F., See, Y.-C., Sivan, R.D., Somero, B.M., Travis, E.O.

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Isolation dependence of gate oxide quality at the LOCOS edge using an in-situ HCl-based pre-gate Pyroclean by Ajuria, S.A., Tobin, P.J., Nguyen, B.-Y., Limb, Y., Mele, T.C.

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A high performance 0.5 mu m BiCMOS triple polysilicon technology for 4 Mb fast SRAMs by Mele, T.C., Hayden, J., Walczyk, F., Lien, M., See, Y.C., Denning, D., Cosentino, S., Perera, A.H.

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Integration of a double polysilicon, fully self-aligned bipolar transistor into a 0.5 mu m BiCMOS technology for fast 4 MBit SRAMs by Hayden, J.D., Burnett, J.D., Perera, A.H., Mele, T.C., Walczyk, F.W., Kaushik, V., Lage, C.S., See, Y.-C.

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The influence of fluorine on threshold voltage instabilities in p/sup +/ polysilicon gated p-channel MOSFETs by Baker, F.K., Pfiester, J.R., Mele, T.C., Tseng, H.-H., Tobin, P.J., Hayden, J.D., Gunderson, C.D., Parrillo, L.C.

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A TiN strapped polysilicon gate cobalt salicide CMOS process by Pfiester, J.R., Mele, T.C., Limb, Y., Jones, R.E., Woo, M., Boeck, B., Gunderson, C.D.

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Early extubation following cardiac surgery in adult congenital heart disease improves post-operative haemodynamics and reduces costs by Costola, G, Constantine, A, Bianchi, P, Mele, S, Shore, D, Aw, T.C, Dimopoulos, K

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