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Absorption properties of GaAsBi based p-i-n heterojunction diodes
by
Zhou, Zhize
,
Mendes, Danuta F
,
Richards, Robert D
,
Bastiman, Faebian
,
David, John PR
Published in
Semiconductor science and technology
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Molecular beam epitaxy growth of GaAsBi using As2 and As4
by
Richards, Robert D.
,
Bastiman, Faebian
,
Hunter, Christopher J.
,
Mendes, Danuta F.
,
Mohmad, Abdul R.
,
Roberts, John S.
,
David, John P.R.
Published in
Journal of crystal growth
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Molecular beam epitaxy growth of GaAsBi using As sub(2) and As sub(4)
by
Richards, Robert D
,
Bastiman, Faebian
,
Hunter, Christopher J
,
Mendes, Danuta F
,
Mohmad, Abdul R
,
Roberts, John S
,
John, P R
Published in
Journal of crystal growth
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Journal Title
Journal Of Crystal Growth
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Semiconductor Science And Technology
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Subjects
Materials Science
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Physics
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2
A1. Growth Models
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1
A3. Molecular Beam Epitaxy
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1
Absorption Coefficient
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1
B1. Bismuth Compounds
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1
B2. Semiconducting Gallium Compounds
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Bismides
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1
Coefficients
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Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
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Cross-Disciplinary Physics: Materials Science; Rheology
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1
Diffusion Length
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Engineering
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Engineering, Electrical & Electronic
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Exact Sciences And Technology
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Flux
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Gallium Arsenide
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Gallium Arsenides
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Invariants
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Materials Science, Multidisciplinary
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Sciencedirect Additional Titles
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Sciencedirect Journals
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Institute Of Physics:jisc Collections:iop Publishing Read And Publish 2024-2025 (Reading List)
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Science Citation Index Expanded (Web Of Science)
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Ingentaconnect Journals
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Institute Of Physics
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Backfile Package - Materials Science [Yms]
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Backfile Package - Physics General (Legacy) [Ypa]
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