N+-InGaAs/InAlAs recessed gates for InAs/AlSb HFET development by Wei-Zhi He, Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, Clement H

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Ti- and Pt-based Schottky gates for InGaSb p-channel HFET development by Geng-Ying Liau, Heng-Kuang Lin, Pei-Chin Chiu, Han-Chieh Ho, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, Clement H

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Low-leakage InAS/AlSb HEMT with high FT-LG product by Yu-Chao Lin, Ta-Wei Fan, Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, C.H.

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Metal-oxide-HEMT on 6.1Å antimonides by Da-Wei Fan, Yu-Chao Lin, Heng-Kuang Lin, Pei-Chin Chiu, Shu-Han Chen, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, C.H.

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DC and RF characteristics of type II lineup InAs/AlSb HFETs by Heng-Kuang Lin, Yu-Chao Lin, Ta-Wei Fan, Pei-Chin Chiu, Shu-Han Chen, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, C.H.

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DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO2 as gate dielectrics by Han-Chieh Ho, Ta-Wei Fan, Geng-Ying Liau, Heng-Kuang Lin, Pei-Chin Chiu, Jen-Inn Chyi, Chih-Hsin Ko, Ta-Ming Kuan, Meng-Kuei Hsieh, Wen-Chin Lee, Wann, Clement H

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