Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy by Cortes-Mestizo, I.E., Espinosa-Vega, L.I., Espinoza-Figueroa, J.A., Yee-Rendón, C.M., Zamora-Peredo, L., Rodríguez, A.G., Mercado-Ornelas, C.A., Perea-Parrales, F.E., Méndez-García, V.H.

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Control method for periodically faceted surfaces and application on AlGaAs/GaAs (631) heterostructures by Perea-Parrales, F.E., Mercado-Ornelas, C.A., Espinosa-Vega, L.I., Belio-Manzano, A., Cortes-Meztiso, I.E., Valdez-Perez, D., Yee-Rendon, C.M., Mendez-Garcia, V.H.

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Nucleation and diffusion processes during the stacking of bilayer quantum dot InAs/GaAs heterostructures by Mercado-Ornelas, C.A., Espinosa-Vega, L.I., Cortes-Mestizo, I.E., Perea-Parrales, F.E., Belio-Manzano, A., Méndez-Garcia, V.H.

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Hyperbolic-tan graded composition InxGa1-xAs layers for THz radiation emitters by Belio-Manzano, A., Regalado-de la Rosa, J.L., Mercado-Ornelas, C.A., Cortes-Mestizo, I.E., Espinosa-Vega, L.I., Alanis, Javier, Castro-Camus, E., Valdez-Pérez, Donato, Kudriavtsev, Yu, Méndez-Garcia, V.H.

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Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy by Cabrera-Montealvo, J.J., Espinosa-Vega, L.I., Hernández-Gaytán, L.M., Mercado-Ornelas, C.A., Perea-Parrales, F.E., Belio-Manzano, A., Yee-Rendón, C.M., Rodríguez, A.G., Méndez-García, V.H., Cortes-Mestizo, I.E.

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GaAs/InGaAs heterostructure strain effects on self-assembly of InAs quantum dots by Mercado-Ornelas, C.A., Cortes-Mestizo, I.E., Eugenio-López, E., Espinosa-Vega, L.I., García-Compean, D., Lara-Velázquez, I., Gorbatchev, A. Yu, Zamora-Peredo, L., Yee-Rendon, C.M., Méndez-Garcia, V.H.

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Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy by Belio-Manzano, A., Espinosa-Vega, L.I., Cortes-Mestizo, I.E., Mercado-Ornelas, C.A., Perea-Parrales, F.E., Gallardo-Hernández, S., Compean-García, V.D., Regalado-de la Rosa, J.L., Castro-Camus, E., Gorbatchev, A. Yu, Méndez-Garcia, Víctor H.

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InAs quantum dots nucleation on (100) and anisotropic (631)-oriented GaAs substrates by Eugenio-López, E., Lopez-Lopez, M., Gorbatchev, A.Yu, Espinosa-Vega, L.I., Cortes-Mestizo, I.E., Mercado-Ornelas, C.A., Del Rı́o-De Santiago, A., Méndez-García, Victor H.

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