Search Results - Mereutza, A.

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  1. 1
    MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers

    MOVPE-grown high CW power InGaAs/InGaAsP/InGaP diode lasers by Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Botez, D., Syrbu, A.V., Yakovlev, V.P., Suruceanu, G.I., Mereutza, A.Z., Jansen, M., Nabiev, R.F.

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  2. 2
    Buried heterostructure AlGaAs photonic devices fabricated by low temperature mesa melt etching and regrowth

    Buried heterostructure AlGaAs photonic devices fabricated by low temperature mesa melt etching and regrowth by Syrbu, A.V., Mereutza, A.Z., Yakovlev, V.P., Suruceanu, G.I., Lupu, A.T.

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  3. 3
    Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers

    Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers by Chand, M., Chu, S.N.G., Dutta, N.K., Lopata, J., Geva, M., Syrbu, A.V., Mereutza, A.Z., Yakovlev, V.P.

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  4. 4
    High performance strained InGaAs/AlGaAs buried-heterostructure quantum-well lasers fabricated by in situ etching and regrowth

    High performance strained InGaAs/AlGaAs buried-heterostructure quantum-well lasers fabricated by in situ etching and regrowth by CHAND, N, DUTTA, N. K, CHU, S. N. G, SYRBU, A. V, MEREUTZA, A. Z, YAKOVLEV, V. P

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  5. 5
    Extremely low threshold current AlGaAs buried-heterostructure quantum well lasers grown by liquid phase epitaxy

    Extremely low threshold current AlGaAs buried-heterostructure quantum well lasers grown by liquid phase epitaxy by ALFEROV, Z. I, ANDREYEV, V. M, MEREUTZA, A. Z, SYRBU, A. V, YAKOVLEV, V. P

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  6. 6
    High performance AlGaAs-based laser diodes: Fabrication, characterization and applications

    High performance AlGaAs-based laser diodes: Fabrication, characterization and applications by Iakovlev, V., Sarbu, A., Mereutza, A., Suruceanu, G., Caliman, A., Catughin, O., Lupu, A., Vieru, S.

    Published in Microelectronics
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  7. 7
    Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers : Strained-layer optoelectronics materials and devices: Strained-layer optoelectronic materials and devices

    Growth and fabrication of high-performance 980-nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers : Strained-layer optoelectronics materials and devices: Stra... by NARESH CHAND, SUNG NEE GEORGE CHU, DUTTA, N. K, LOPATA, J, GEVA, M, SYRBU, A. V, MEREUTZA, A. Z, YAKOVLEV, V. P

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  8. 8
    Compact-size electronic device for diode-laser characteristic curve tracing

    Compact-size electronic device for diode-laser characteristic curve tracing by Smeu, Emil, Ispasoiu, Radu G, Suruceanu, Grigore I, Mereutza, Alexandru Z

    Published in Optical Engineering
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  9. 9
    Fabrication, characterization, and applications of high‐performance AlGaAs‐based buried‐heterostructure diode lasers

    Fabrication, characterization, and applications of high‐performance AlGaAs‐based buried‐heterostructure diode lasers by Syrbu, Alexei V.

    Published in Optical engineering
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  10. 10
    AlGaAs native oxides in the fabrication of high performance laser diodes

    AlGaAs native oxides in the fabrication of high performance laser diodes by Syrbu, A., Mereutza, A., Suruceanu, G., Yakovlev, V., Caliman, A., Vieru, S.

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  11. 11
    AlGaAs/InGaAs buried heterostructure laser diodes for pumping solid state lasers

    AlGaAs/InGaAs buried heterostructure laser diodes for pumping solid state lasers by Syrbu, A., Mereutza, A., Suruceanu, G., Yakovlev, V., Catughin, O., Vieru, S., Popescu, I.M., Ispasoiu, R.G., Predescu, M.

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  12. 12
    ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high cw power and "wallplug" efficiency

    ZnSe-facet-passivated InGaAs/InGaAsP/InGaP diode lasers of high cw power and "wallplug" efficiency by Syrbu, A.V., Yakovlev, V.P., Suruceanu, G.I., Mereutza, A.Z., Mawst, L.J., Bhattacharya, A., Nesnidal, M., Lopez, J., Boetz, D.

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