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    Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage

    Influence of Doping Engineering in 1 μm Drift Layer Quasi‐Vertical Fin Field‐Effect Transistor for Achieving >139 V Breakdown Voltage by Michel, Ancy, I. V., Binola K. Jebalin, Franklin, S. Angen, Juliet Rani, Sylvia, A., Angelin Delighta, Nirmal, D.

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