Search Results - Mikhaelashvili, V.

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  1. 1
    Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film

    Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film by Mikhaelashvili, V., Betzer, Y., Prudnikov, I., Orenstein, M., Ritter, D., Eisenstein, G.

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  2. 2
    Modification of modal gain in InGaAs-GaAs quantum-well lasers due to barrier-state carriers

    Modification of modal gain in InGaAs-GaAs quantum-well lasers due to barrier-state carriers by Finzi, D., Mikhaelashvili, V., Tessler, N., Eisenstein, G.

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  3. 3
    Temperature dependent loss and overflow effects in quantum well lasers

    Temperature dependent loss and overflow effects in quantum well lasers by Mikhaelashvili, V., Tessler, N., Nagar, R., Eisenstein, G., Dentai, A.G., Chandrasakhar, S., Joyner, C.H.

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  4. 4
    Lasing transitions between self-localized barrier-state electrons and confined-state heavy holes in InGaAs-InGaAsP-InP multiple-quantum-well lasers

    Lasing transitions between self-localized barrier-state electrons and confined-state heavy holes in InGaAs-InGaAsP-InP multiple-quantum-well lasers by Tessler, N., Mikhaelashvili, V., Nagar, R., Eisenstein, G., Dentai, A.G., Chandrasekhar, S., Joyner, C.H.

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  5. 5
    Dynamics of barrier state electron self-localization in InGaAs/InGaAsP multiple quantum well lasers

    Dynamics of barrier state electron self-localization in InGaAs/InGaAsP multiple quantum well lasers by Finzi, D., Tessler, N., Mikhaelashvili, V., Eisenstein, G., Dentai, A. G., Chandraskhar, S., Joyner, C. H.

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  6. 6
    Modal gain reduction due to barrier state carriers in quantum well lasers

    Modal gain reduction due to barrier state carriers in quantum well lasers by Finzi, D., Mikhaelashvili, V., Tessler, N., Eisenstein, G.

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  7. 7
    Direct evidence for self localization of barrier state electrons in 1500 nm MQW lasers

    Direct evidence for self localization of barrier state electrons in 1500 nm MQW lasers by Tessler, N., Mikhaelashvili, V., Nagar, R., Eisenstein, G., Dentai, A.G., Chandrasekhar, S., Joyner, C.H.

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  8. 8
    Temperature and output power dependence of carrier overflow and internal loss in InGaAs/InGaAsP multiple quantum well lasers

    Temperature and output power dependence of carrier overflow and internal loss in InGaAs/InGaAsP multiple quantum well lasers by Tessler, N., Mikhaelashvili, V., Nagar, R., Eisenstein, G., Dentai, A.G., Joyner, C.H., Chandrasekhar, S.

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