Diffusion mechanism of fluorine in plasma processing of III-V semiconductor compounds by Kodama, Y., Zaizen, Y., Minari, H., Cho, Y., Fukasawa, M., Kugimiya, K., Nagaoka, K., Iwamoto, H.

Get full text

High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer by Manda, S., Matsumoto, R., Saito, S., Maruyama, S., Minari, H., Hirano, T., Takachi, T., Fujii, N., Yamamoto, Y., Zaizen, Y., Hirano, T., Iwamoto, H.

Request full text

Effects of atomic disorder on impact ionization rate in silicon nanodots by Mori, N, Tomita, M, Minari, H, Watanabe, T, Koshida, N

Get full text

Effects of wavefunction modulation on electron transport in ultrathin-body DG MOSFETs by Mori, N., Minari, H.

Request full text

(Invited) First-Principles Studies of the Defect Formation in III-V FETs Grown by Fin Replacement Method by Minari, Hideki, Yoshida, Shinichi, Sawada, Ken, Nakazawa, Masashi, Caymax, Matty, Merckling, Clement, Waldron, Niamh, Guo, Weiming, Jiang, Sijia, Collaert, Nadine, Simoen, Eddy, Lin, D, Pourtois, Geoffrey

Get full text

Nano-device simulation from an atomistic view by Mori, N., Mil'nikov, G., Minari, H., Kamakura, Y., Zushi, T., Watanabe, T., Uematsu, M., Itoh, K. M., Uno, S., Tsuchiya, H.

Request full text

Comparative Study on Si and Ge p-Type Nanowire FETs Based on Full-Band Non-Equilibrium Green's Function Simulation by Minari, H., Mori, N.

Request full text

Defect formation in III-V fin grown by aspect ratio trapping technique: A first-principles study by Minari, H., Yoshida, S., Sawada, K., Nakazawa, M., Pourtois, G., Merckling, C., Waldron, N., Guo, W., Jiang, S., Collaert, N., Simoen, E., Lin, D., Caymax, M.

Request full text

Effects of atomic disorder on carrier transport in Si nanowire transistors by Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., Mori, N.

Request full text

Strain effects on ballistic current in ultrathin DG SOI MOSFETs by Minari, H., Mori, N.

Request full text

Impact of oxidation induced atomic disorder in narrow Si nanowires on transistor performance by Minari, H., Zushi, T., Watanabe, T., Kamakura, Y., Uno, S., Mori, N.

Request full text

Subband representation in atomistic transport simulation of nanowire transistors by Mil'nikov, G V, Mori, N, Kamakura, Y, Minari, H

Request full text

Atomic disorder effects on electronic states in InAs/GaAs intermediate-band solar cells by Takahashi, H., Minari, H., Mori, N.

Request full text

Simulation of the effect of arsenic discrete distribution on device characteristics in silicon nanowire transistors by Uematsu, M., Itoh, K. M., Mil'nikov, G., Minari, H., Mori, N.

Request full text

Tailoring the electronic properties of vertically stacked quantum-dots by local potential modulation by Takahashi, H., Minari, H., Mori, N.

Request full text

Effects of a strained layer on transport characteristics of tunnel transistors by Yamamoto, M., Kitayama, T., Minari, H., Mori, N.

Request full text

Quantum transport and electron-phonon interaction in nanoscale MOSFETs by Mori, N, Minari, H, Mil'nikov, G, Kamakura, Y

Request full text

721 - Regulatory Affairs, Quality Systems, Policy, and Ethics: ANALYZING A REVIEW SYSTEM FOR CLINICAL APPLICATIONS OF STEM CELL-BASED INTERVENTIONS: THE JAPANESE PERSPECTIVE by Takashima, K., Gaydarska, H., Minari, J.

Get full text

Regulatory Affairs, Quality Systems, Policy, and Ethics: ANALYZING A REVIEW SYSTEM FOR CLINICAL APPLICATIONS OF STEM CELL-BASED INTERVENTIONS: THE JAPANESE PERSPECTIVE by Takashima, K., Gaydarska, H., Minari, J.

Get full text

Temperature responsive PEG-based polyurethanes “à la carte” by Ronco, Ludmila Irene, Basterretxea, Andere, Mantione, Daniele, Aguirresarobe, Robert H., Minari, Roque Javier, Gugliotta, Luis Marcelino, Mecerreyes, David, Sardon, Haritz

Get full text