Search Results - Miroshkin, V.V.

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  1. 1
    A simple approach to SEU cross section evaluation [semiconductor memories]

    A simple approach to SEU cross section evaluation [semiconductor memories] by Miroshkin, V.V., Tverskoy, M.G.

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  2. 2
    Two parameter model for predicting SEU rate [memory devices]

    Two parameter model for predicting SEU rate [memory devices] by Miroshkin, V.V., Tverskoy, M.G.

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  3. 3
    Some aspects of application of the two parameter SEU model

    Some aspects of application of the two parameter SEU model by Miroshkin, V.V., Tverskoy, M.G.

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  4. 4
    Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons

    Comparison and implications of charge collection measurements in silicon and InGaAs irradiated by energetic protons and neutrons by Normand, E., Oberg, D.L., Wert, J.L., Majewski, P.P., Woffinden, G.A., Satoh, S., Sasaki, K., Tverskoy, M.G., Miroshkin, V.V., Goleminov, N., Wender, S.A., Gavron, A.

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