Annealing of an AlN buffer layer in N2-CO for growth of a high-quality AlN film on sapphire by Miyake, Hideto, Nishio, Gou, Suzuki, Shuhei, Hiramatsu, Kazumasa, Fukuyama, Hiroyuki, Kaur, Jesbains, Kuwano, Noriyuki

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Curvature-controllable and crack-free AlN/sapphire templates fabricated by sputtering and high-temperature annealing by Hayashi, Yusuke, Tanigawa, Kentaro, Uesugi, Kenjiro, Shojiki, Kanako, Miyake, Hideto

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230 nm wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs by Uesugi, Kenjiro, Akaike, Ryota, Ichikawa, Shuhei, Nakamura, Takao, Kojima, Kazunobu, Tsuchiya, Masahiko, Miyake, Hideto

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Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation by Kondo, Ryosuke, Yabutani, Ayumu, Omori, Tomoya, Yamada, Kazuki, Matsubara, Eri, Hasegawa, Ryota, Nishibayashi, Toma, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Iwaya, Motoaki

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Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams by Uedono, Akira, Shojiki, Kanako, Uesugi, Kenjiro, Chichibu, Shigefusa F., Ishibashi, Shoji, Dickmann, Marcel, Egger, Werner, Hugenschmidt, Christoph, Miyake, Hideto

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Fabrication of AlN templates on SiC substrates by sputtering-deposition and high-temperature annealing by Uesugi, Kenjiro, Hayashi, Yusuke, Shojiki, Kanako, Xiao, Shiyu, Nagamatsu, Kentaro, Yoshida, Harumasa, Miyake, Hideto

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Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle by Fukuyama, Hiroyuki, Miyake, Hideto, Nishio, Gou, Suzuki, Shuhei, Hiramatsu, Kazumasa

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Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates by Murotani, Hideaki, Fujii, Atsushi, Oshimura, Ryota, Kusaba, Takafumi, Uesugi, Kenjiro, Miyake, Hideto, Yamada, Yoichi

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Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K by Murotani, Hideaki, Hayakawa, Yuya, Ikeda, Kazuki, Miyake, Hideto, Hiramtsu, Kazumasa, Yamada, Yoichi

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Local and anisotropic strain in AlN film on sapphire observed by Raman scattering spectroscopy by Shojiki, Kanako, Hayashi, Yusuke, Uesugi, Kenjiro, Miyake, Hideto

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Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates by Nakanishi, Yudai, Hayashi, Yusuke, Hamachi, Takeaki, Tohei, Tetsuya, Nakajima, Yoshikata, Xiao, Shiyu, Shojiki, Kanako, Miyake, Hideto, Sakai, Akira

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Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions by Lin, Chia-Hung, Yamashita, Yasuhiro, Miyake, Hideto, Hiramatsu, Kazumasa

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Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers by Kawase, Yuta, Ikeda, Syunya, Sakuragi, Yusuke, Yasue, Shinji, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate by Shirato, Tatsuya, Hayashi, Yusuke, Uesugi, Kenjiro, Shojiki, Kanako, Miyake, Hideto

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Preparation of Cu2ZnSnS4 single crystals from Sn solutions by Nagaoka, Akira, Yoshino, Kenji, Taniguchi, Hiroki, Taniyama, Tomoyasu, Miyake, Hideto

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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes by Shimokawa, Moe, Teramura, Shohei, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Ogino, Yuya, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto

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Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN by Shojiki, Kanako, Shimokawa, Moe, Iwayama, Sho, Omori, Tomoya, Teramura, Shohei, Yamaguchi, Akihiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto

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Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing by Hakamata, Junya, Kawase, Yuta, Dong, Lin, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Akasaki, Isamu

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Improved emission intensity of UVC-LEDs from using strain relaxation layer on sputter-annealed AlN by Nagamatsu, Kentaro, Liu, Xiaotong, Uesugi, Kenjiro, Miyake, Hideto

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Statistics of excitonic energy states based on phononic-excitonic-radiative model by Ishitani, Yoshihiro, Oki, Kensuke, Miyake, Hideto

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