Age-related changes in oxidized proteins by Oliver, C.N., Ahn, B.W., Moerman, E.J., Goldstein, S., Stadtman, E.R.

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Studies on the molecular-genetic basis of replicative senescence in Werner syndrome and normal fibroblasts by Goldstein, S., Murano, S., Benes, H., Moerman, E.J., Jones, R.A., Thweatt, R., Shmookler Reis, R.J., Howard, B.H.

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Quantitative analysis of glyceryl nitrates on thin-layer chromatograms by Rosseel, M.-T., Bogaert, M.G., Moerman, E.J.

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Quantitative analysis of glyceryl nitrates on thin-layer chromatograms : Comparison of colorimetry and densitometry by Rosseel, M.-T., Bogaert, M.G., Moerman, E.J.

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Chronostratigraphic model of a high-resolution drill core record of the past million years from the Koora Basin, south Kenya Rift: Overcoming the difficulties of variable sedimenta... by Deino, A.L., Dommain, R., Keller, C.B., Potts, R., Behrensmeyer, A.K., Beverly, E.J., King, J., Heil, C.W., Stockhecke, M., Brown, E.T., Moerman, J., deMenocal, P.

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Predictors of Nonseroconversion to SARS-CoV-2 Vaccination in Kidney Transplant Recipients by Frölke, Sophie C., Bouwmans, Pim, Messchendorp, A. Lianne, Geerlings, Suzanne E., Hemmelder, Marc H., Gansevoort, Ron T., Hilbrands, Luuk B., Reinders, Marlies E.J., Sanders, Jan-Stephan F., Bemelman, Frederike J., Peters-Sengers, Hessel

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Material optimisation for AlGaN/GaN HFET applications by Bougrioua, Z., Moerman, I., Sharma, N., Wallis, R.H., Cheyns, J., Jacobs, K., Thrush, E.J., Considine, L., Beanland, R., Farvacque, J.-L., Humphreys, C.

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Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry by Stafford, A, Irvine, S.J.C, Bougrioua, Z, Jacobs, K, Moerman, I, Thrush, E.J, Considine, L

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Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2″ wafer close-spaced vertical rotating disk reactor by Vanhollebeke, K., Considine, L., Moerman, I., Demeester, P., Thrush, E.J., Crawley, J.A.

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Study of GaN and InGaN films grown by metalorganic chemical vapour deposition by Van der Stricht, W., Moerman, I., Demeester, P., Crawley, J.A, Thrush, E.J.

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Mobility Collapse in Undoped and Si-Doped GaN Grown by LP-MOVPE by Bougrioua, Z., Farvacque, J.-L., Moerman, I., Demeester, P., Harris, J.J., Lee, K., van Tendeloo, G., Lebedev, O., Thrush, E.J.

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Growth and in situ monitoring of GaN using IR interference effects by Considine, L., Thrush, E.J., Crawley, J.A., Jacobs, K., Van der Stricht, W., Moerman, I., Demeester, P., Park, G.H., Hwang, S.J., Song, J.J.

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Effects of Carrier Gas on the Properties of InGaN/GaN Quantum Well Structures Grown by MOCVD by Duxbury, N., Dawson, P., Bangert, U., Thrush, E.J., van der Stricht, W., Jacobs, K., Moerman, I.

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Highly uniform [formula omitted] and [formula omitted] structures grown in a multiwafer vertical rotating susceptor MOVPE reactor by Zhang, X., Moerman, I., Sys, C., Demeester, P., Crawley, J.A., Thrush, E.J.

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MOVPE growth of high quality InGaN films and InGaN/GaN quantum wells by Van Der Stricht, W., Moerman, I., Demeester, P., Thrush, E.J., Crawley, J.A.

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