Investigation of the radiation hardness of GaAs sensors in an electron beam by Afanaciev, K, Bergholz, M, Bernitt, P, Chelkov, G, Gajewski, J, Gostkin, M, Grah, C, Heller, R, Henschel, H, Ignatenko, A, Krumshteyn, Z, Kulis, S, Lange, W, Lohmann, W

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GaAs detector material made from 3-inch wafers by Ayzenshtat, G.I., Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Mokeev, D.Y., Okaevich, L.S., Tolbanov, O.P., Tyazhev, A.V.

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Modeling of characteristics of ionizing radiation detector based on AlGaAs–GaAs heterostructure by Ayzenshtat, G.I, Mokeev, D.Y, Tolbanov, O.P, Khan, V.A

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20-140 keV X-ray sensitivity of GaAs detectors by Zarubin, A.N., Mokeev, D.Y., Tyazhev, A.V.

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Spectrometric Detector Based on GaAs: Cr by Bimatov, M.V., Tyazhev, A.V., Mokeev, D.Y.

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New photovoltaic gamma and X-ray detector by Ayzenshtat, G.L., Vilisova, M.D., Drugova, E.P., Mokeev, D.Y., Porokhovnichnko, L.P., Chubirko, V.A.

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Detector structures based on epitaxial gallium arsenide compensated by chromium by Vilisova, M.D., Tolbanov, O.P., Mokeev, D.Y., Drugova, E.P., Chubirko, V.A., Porokhovnichenko, L.P., Ponomarev, I.V.

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