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Analysis and simulation of a 45nm high-K/metal PD-SOI DTMOS under forward bias
by
Jimenez-P, Abimael
,
Ambrosio-L, Roberto C.
,
Martinez-P, Carlos A.
,
Monfil-L, Karim
,
Munoz-G, Jose A.
,
Blanco-G, Zurika I.
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Electric Potential
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Hafnium Compounds
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Leakage Current
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Logic Gates
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Ieee Electronic Library (Iel) Conference Proceedings
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