Tuning the Electronic Characteristics of Monolayer MoS2‐Based Transistors by Ion Irradiation: The Role of the Substrate by Fekri, Zahra, Chava, Phanish, Hlawacek, Gregor, Ghorbani‐Asl, Mahdi, Kretschmer, Silvan, Awan, Wajid, Mootheri, Vivek, Venanzi, Tommaso, Sycheva, Natalia, George, Antony, Turchanin, Andrey, Watanabe, Kenji, Taniguchi, Takashi, Helm, Manfred, Krasheninnikov, Arkady V., Erbe, Artur

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Understanding ambipolar transport in MoS2 field effect transistors: the substrate is the key by Mootheri, Vivek, Leonhardt, Alessandra, Verreck, Devin, Asselberghs, Inge, Huyghebaert, Cedric, de Gendt, Stefan, Radu, Iuliana, Lin, Dennis, Heyns, Marc

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High-efficiency dual single layer graphene modulator integrated on slot waveguides by Wu, Chenghan, Reep, Tom, Brems, Steven, Jussot, Julien, Mootheri, Vivek, Van Campenhout, Joris, Huyghebaert, Cedric, Pantouvaki, Marianna, Wang, Zheng, Van Thourhout, Dries

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Direct Assessment of Defective Regions in Monolayer MoS 2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements by Minj, Albert, Mootheri, Vivek, Banerjee, Sreetama, Nalin Mehta, Ankit, Serron, Jill, Hantschel, Thomas, Asselberghs, Inge, Goux, Ludovic, Kar, Gouri Sankar, Heyns, Marc, Lin, Dennis H C

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Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements by Minj, Albert, Mootheri, Vivek, Banerjee, Sreetama, Nalin Mehta, Ankit, Serron, Jill, Hantschel, Thomas, Asselberghs, Inge, Goux, Ludovic, Kar, Gouri Sankar, Heyns, Marc, Lin, Dennis H. C.

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Interface admittance measurement and simulation of dual gated CVD WS2 MOSCAPs: Mapping the DIT(E) profile by Mootheri, Vivek, Wu, Xiangyu, Cott, Daire, Groven, Benjamin, Heyns, Marc, Asselberghs, Inge, Radu, Iuliana, Lin, Dennis

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Understanding ambipolar transport in MoS 2 field effect transistors: the substrate is the key by Mootheri, Vivek, Leonhardt, Alessandra, Verreck, Devin, Asselberghs, Inge, Huyghebaert, Cedric, de Gendt, Stefan, Radu, Iuliana, Lin, Dennis, Heyns, Marc

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Graphene based Van der Waals contacts on MoS2 field effect transistors by Mootheri, Vivek, Arutchelvan, Goutham, Banerjee, Sreetama, Sutar, Surajit, Leonhardt, Alessandra, Boulon, Marie-Emmanuelle, Huyghebaert, Cedric, Houssa, Michel, Asselberghs, Inge, Radu, Iuliana, Heyns, Marc, Lin, Dennis

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Tuning the Electronic Characteristics of Monolayer MoS 2 ‐Based Transistors by Ion Irradiation: The Role of the Substrate by Fekri, Zahra, Chava, Phanish, Hlawacek, Gregor, Ghorbani‐Asl, Mahdi, Kretschmer, Silvan, Awan, Wajid, Mootheri, Vivek, Venanzi, Tommaso, Sycheva, Natalia, George, Antony, Turchanin, Andrey, Watanabe, Kenji, Taniguchi, Takashi, Helm, Manfred, Krasheninnikov, Arkady V., Erbe, Artur

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Graphene based Van der Waals contacts on MoS 2 field effect transistors by Mootheri, Vivek, Arutchelvan, Goutham, Banerjee, Sreetama, Sutar, Surajit, Leonhardt, Alessandra, Boulon, Marie-Emmanuelle, Huyghebaert, Cedric, Houssa, Michel, Asselberghs, Inge, Radu, Iuliana, Heyns, Marc, Lin, Dennis

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Contact Interface Characterization of Graphene contacted MoS2 FETs by Mootheri, Vivek, Minj, Albert, Arutchelvan, Goutham, Leonhardt, Alessandra, Asselberghs, Inge, Heyns, Marc, Radu, Iuliana, Lin, Dennis

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