Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond by Greer, A.I.M., Moran, D.A.J.

Get full text

Processing of 50nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications by Moran, D.A.J., MacLaren, D.A., Porro, S., McLelland, H., John, P., Wilson, J.I.B.

Get full text

50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz by ELGAID, K, MCLELLAND, H, HOLLAND, M, MORAN, D. A. J, STANLEY, C. R, THAYNE, I. G

Get full text

High Mobility III-V MOSFETs For RF and Digital Applications by Passlack, M., Zlotnicka, A., Fejes, P., Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D., Thoms, S., Asenov, A., Kalna, K., Zurcher, P., Thayne, I.G., Rajagopalan, K., Droopad, R., Abrokwah, J., Tutt, M., Park, Y.-B., Johnson, E., Hartin, O.

Request full text

Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications by MORAN, D. A. J, MACLAREN, D. A, PORRO, S, MCLELLAND, H, JOHN, P, WILSON, J. I. B

Get full text

Fabrication of 22nm T-gates for HEMT applications by Bentley, S., Li, X., Moran, D.A.J., Thayne, I.G.

Get full text

Two methods of realising 10 nm T-gate lithography by Bentley, S., Li, X., Moran, D.A.J., Thayne, I.G.

Get full text

A nanoanalytical investigation of high- k dielectric gate stacks for GaAs based MOSFET devices by Longo, P., Craven, A.J., Holland, M.C., Moran, D.A.J., Thayne, I.G.

Get full text

Enhancement-Mode GaAs MOSFETs With an In@@d0.3@ Ga@@d0.7@As Channel, a Mobility of Over 5000 cm@@u2@/V @u.s, and Transconductance of Over 475 [mu]S/[mu]m by Hill, R.J.W., Moran, D.A.J., Xu, Li, Zhou, Haiping, Macintyre, D, Thoms, S, Asenov, A, Zurcher, P, Rajagopalan, K, Abrokwah, J, Droopad, R, Passlack, M, Thayne, I G

Get full text

Enhancement-Mode GaAs MOSFETs With an In0.3 Ga0.7As Channel, a Mobility of Over 5000 cm2/V ·s, and Transconductance of Over 475 [mu]S/[mu]m by Hill, R.J.W, Moran, D.A.J, Li, Xu, Zhou, Haiping, Macintyre, D, Thoms, S, Asenov, A, Zurcher, P, Rajagopalan, K, Abrokwah, J, Droopad, R, Passlack, M, Thayne, I.G

Get full text

Enhancement-Mode GaAs MOSFETs With an \hbox \hbox\hbox Channel, a Mobility of Over 5000 \hbox^/\hbox \cdot \hbox, and Transconductance of Over 475 \mu\hbox/\mu\hbox by Hill, R.J.W., Moran, D.A.J., Xu Li, Haiping Zhou, Macintyre, D., Thoms, S., Asenov, A., Zurcher, P., Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M., Thayne, I.G.

Get full text

50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz by Elgaid, K., McLelland, H., Holland, M., Moran, D.A.J., Stanley, C.R., Thayne, I.G.

Get full text

Monte Carlo Simulations of High-Performance Implant Free In Ga As Nano-MOSFETs for Low-Power CMOS Applications by Kalna, K., Wilson, J.A., Moran, D.A.J., Hill, R.J.W., Long, A.R., Droopad, R., Passlack, M., Thayne, I.G., Asenov, A.

Get full text

Deep sub-micron and self-aligned flatband III-V MOSFETs by Hill, R.J.W., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Holland, M.C., Longo, P., Moran, D.A.J., Craven, A.J., Stanley, C.R., Asenov, A., Droopad, R., Passlack, M., Thayne, I.G.

Request full text

Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process by Moran, D.A.J., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C.R., Thayne, I.G.

Get full text

Enhancement mode n-MOSFET with high-κ dielectric on GaAs substrate by Rajagopalan, K., Zurcher, P., Abrokwah, J., Droopad, R., Moran, D.A.J., Hill, R.J.W., Li, X., Zhou, H., McIntyre, D., Thoms, S., Thayne, I. G., Passlack, M.

Request full text

Sub-micron, metal gate, high-к dielectric, implant-free, enhancement-mode III-V mosfets by Moran, D.A.J., Hill, R.J.W., Li, X., Zhou, H., McIntyre, D., Thoms, S., Droopad, R., Zurcher, P., Rajagopalan, K., Abrokwah, J., Passlack, M., Thayne, I.G.

Request full text

Ino.75Gao.25As channel III-V MOSFETs with leading performance metrics by Hill, R.J.W., Moran, D.A.J., Li, X., Zhou, H., Macintyre, D.S., Thoms, S., Asenov, A., Thayne, I.G., Droopad, R., Rajagopalan, K., Fejes, P., Passlack, M.

Request full text

Fabrication of 30nm T-Gate High Electron Mobility Transistors Using a Bi-Layer of PMMA and UVIII by Boyd, E., Zhou, H., McLelland, H., Moran, D.A.J., Thoms, S., Thayne, L.G.

Request full text

Self-aligned 0.12 /spl mu/m T-gate In/sub .53/Ga/sub .47/As/In/sub .52/Al/sub .48/As HEMT technology utilising a non-annealed ohmic contact strategy by Moran, D.A.J., Kalna, K., Boyd, E., McEwan, F., McLelland, H., Zhuang, L.L., Stanley, C.R., Asenov, A., Thayne, I.

Request full text