S-band operation of SiC power MESFET with 20 W (4.4 W/mm) output power and 60% PAE by Henry, H.G., Augustine, G., DeSalvo, G.C., Brooks, R.C., Barron, R.R., Oliver, J.D., Morse, A.W., Veasel, B.W., Esker, P.M., Clarke, R.C.

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Advances in SiC materials and devices: an industrial point of view by Siergiej, R.R, Clarke, R.C, Sriram, S, Agarwal, A.K, Bojko, R.J, Morse, A.W, Balakrishna, V, MacMillan, M.F, Burk, Jr, A.A, Brandt, C.D

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A silicon carbide self-aligned and ion implanted static induction transistor (SAI-SIT) for 150 watt S-Band operation by Knight, T.J., Clarke, R.C., Barron, R.R., Ostop, J.A., Morick, B.A., Gigante, J.R., Malkowski, W.J., Morse, A.W., DeSalvo, G.C., Petrosky, K.J., Curtice, W.R.

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Application of high power silicon carbide transistors at radar frequencies by Morse, A.W., Esker, P.M., Clarke, R.C., Brandt, C.D., Siergiej, R.R., Agarwal, A.K.

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Recent application of silicon carbide to high power microwave by Morse, A.W., Esker, P.M., Sriram, S., Hawkins, J.J., Chen, L.S., Ostop, J.A., Smith, T.J., Davis, C.D., Barron, R.R., Clarke, R.C., Siergiej, R.R., Brandt, C.D.

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A 16 W, 40% efficient, continuous wave, 4H SiC, L-band SIT by Clarke, R.C., Morse, A.W., Esker, P., Curtice, W.R.

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Recent advances in high temperature, high frequency SiC devices by Clarke, R.C., Brandt, C.D., Sriram, S., Siergiej, R.R., Morse, A.W., Agarwal, A.K., Chen, L.S., Balakrishna, V., Burk, A.A.

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Recent Advances in Wide Bandgap Materials and Devices for High Power Microwave Applications by Clarke, R.C., Siergiej, R.R., Sriram, S., Li Shu Chen, Thomas, R.N., Burk, A.A., Morse, A.W., Brandt, C.D.

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Recent progress in 4H-SiC static induction transistors for high frequency power generation by Bojko, R., Siergiej, R.R., Eldridge, G.W., Chen, L.-S., Morse, A.W., Ostop, J., Esker, P.M., Barron, B., Clarke, R.C., Brandt, C.D.

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The mixed mode 4H-SiC SIT as an S-band microwave power transistor by Clarke, R.C., Agarwal, A.K., Siergiej, R.R., Brandt, C.D., Morse, A.W.

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High efficiency operation of 6-H SiC MESFETs at 6 GHz by Sriram, S., Barron, R., Morse, A.W., Smith, T.J., Augustine, G., Burk, A.A., Clarke, R.C., Glass, R.C., Hobgood, H.M., Orphanos, P.A., Siergiej, R.R., Brandt, C.D., Driver, M.C., Hopkins, R.H.

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High gain 4H-SiC static induction transistors using novel sub-micron airbridging by Siergiej, R.R., Morse, A.W., Esker, P.M., Smith, T.J., Bojko, R.J., Rowland, L.B., Clarke, R.C.

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SiC electronics by Agarwal, A.K., Augustine, G., Balakrishna, V., Brandt, C.D., Burk, A.A., Li-Shu Chen, Clarke, R.C., Esker, P.M., Hobgood, H.M., Hopkins, R.H., Morse, A.W., Rowland, L.B., Seshadri, S., Siergiej, R.R., Smith, T.J., Sriram, S.

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Treatment of anastomotic leak after esophagectomy: insights of an international case vignette survey and expert discussions by Ubels, Sander, Lubbers, Merel, Verstegen, Moniek H P, Bouwense, Stefan A W, van Daele, Elke, Ferri, Lorenzo, Gisbertz, Suzanne S, Griffiths, Ewen A, Grimminger, Peter, Hanna, George, Hubka, Michal, Law, Simon, Low, Donald, Luyer, Misha, Merritt, Robert E, Morse, Christopher, Mueller, Carmen L, Nieuwenhuijzen, Grard A P, Nilsson, Magnus, Reynolds, John V, Ribeiro, Ulysses, Rosati, Riccardo, Shen, Yaxing, Wijnhoven, Bas P L, Klarenbeek, Bastiaan R, van Workum, Frans, Rosman, Camiel

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Direct‐drive laser‐fusion experiments with the OMEGA, 60‐beam, >40 kJ, ultraviolet laser system by Soures, J. M., McCrory, R. L., Verdon, C. P., Babushkin, A., Bahr, R. E., Boehly, T. R., Boni, R., Bradley, D. K., Brown, D. L., Craxton, R. S., Delettrez, J. A., Donaldson, W. R., Epstein, R., Jaanimagi, P. A., Jacobs, S. D., Kearney, K., Keck, R. L., Kelly, J. H., Kessler, T. J., Kremens, R. L., Knauer, J. P., Kumpan, S. A., Letzring, S. A., Lonobile, D. J., Loucks, S. J., Lund, L. D., Marshall, F. J., McKenty, P. W., Meyerhofer, D. D., Morse, S. F. B., Okishev, A., Papernov, S., Pien, G., Seka, W., Short, R., Shoup, M. J., Skeldon, M., Skupsky, S., Schmid, A. W., Smith, D. J., Swales, S., Wittman, M., Yaakobi, B.

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Inertial confinement fusion experiments with OMEGA-A 30-kJ, 60-beam UV laser by Boehly, T.R, McCrory, R.L, Verdon, C.P, Seka, W, Loucks, S.J, Babushkin, A, Bahr, R.E, Boni, R, Bradley, D.K, Craxton, R.S, Delettrez, J.A, Donaldson, W.R, Epstein, R, Harding, D, Jaanimagi, P.A, Jacobs, S.D, Kearney, K, Keck, R.L, Kelly, J.H, Kessler, T.J, Kremens, R.L, Knauer, J.P, Lonobile, D.J, Lund, L.D, Marshall, F.J, McKenty, P.W, Meyerhofer, D.D, Morse, S.F.B, Okishev, A, Papernov, S, Pien, G, Safford, T, Schnittman, J.D, Short, R, Shoup III, M.J, Skeldon, M, Skupsky, S, Schmid, A.W, Smalyuk, V.A, Smith, D.J, Soures, J.M, Wittman, M, Yaakobi, B

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simple and automatic leaflet movement monitoring system by Applewhite, P.B, Satter, R.L, Morse, M.J, Galston, A.W

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The temperature and pressure dependence of the elastic constants of thallium bromide ag by Morse, Garth E., Lawson, A.W.

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Production and decay of the A 2 meson in 7 GeV/ cπ−p interactions by Johnston, T.F., Key, A.W., Prentice, J.D., Yoon, T.S., Garfinkel, A.F., Morse, R., Oh, B.Y., Walker, W.D.

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Decomposition of Molybdenum Hexacarbonyl by FERGUSON, I. F, AINSCOUGH, J. B, MORSE, D, MILLER, A. W

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