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High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method
by
Jenny, J. R.
,
Müller, St G.
,
Powell, A.
,
Tsvetkov, V. F.
,
Hobgood, H. M.
,
Glass, R. C.
,
Carter, C. H.
Published in
Journal of electronic materials
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SiC and GaN Wide Bandgap Device Technology Overview
by
Milligan, J.W.
,
Sheppard, S.
,
Pribble, W.
,
Wu, Y.-F.
,
Muller, StG
,
Palmour, J.W.
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Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications
by
Müller, St.G.
,
Sanchez, E.K.
,
Hansen, D.M.
,
Drachev, R.D.
,
Chung, G.
,
Thomas, B.
,
Zhang, J.
,
Loboda, M.J.
,
Dudley, M.
,
Wang, H.
,
Wu, F.
,
Byrappa, S.
,
Raghothamachar, B.
,
Choi, G.
Published in
Journal of crystal growth
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Journal Of Crystal Growth
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Journal Of Electronic Materials
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Materials Science
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Materials Science, Multidisciplinary
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Silicon Carbide
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4H-Sic
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A1. Defects
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A1. Stresses
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A2. Growth From Vapor
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A3. Chemical Vapor Deposition Processes
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B2. Silicon Carbide
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Chemical Vapor Deposition
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Condensed Matter: Structure, Mechanical And Thermal Properties
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Cross-Disciplinary Physics: Materials Science; Rheology
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Crystal Defects
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Crystallography
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