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Search Results - Muravitskaya, G. N.
Search Results - Muravitskaya, G. N.
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Petrology of the Europe-Largest Burakovka early Paleoproterozoic layered pluton (Southern Karelia, Russia)
by
Chistyakov, A. V.
,
Sharkov, E. V.
,
Grokhovskaya, T. L.
,
Bogatikov, O. A.
,
Muravitskaya, G. N.
,
Grinevich, N. G.
Published in
Russian journal of earth sciences
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Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells
by
Svitsiankou, I. E.
,
Pavlovskii, V. N.
,
Muravitskaya, E. V.
,
Lutsenko, E. V.
,
Yablonskii, G. P.
,
Borodavchenko, O. M.
,
Zhivulko, V. D.
,
Mudry, A. V.
,
Yakushev, M. V.
,
Kognovitckii, S. O.
Published in
Semiconductors (Woodbury, N.Y.)
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MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3
by
Lutsenko, E. V.
,
Rzheutski, M. V.
,
Vainilovich, A. G.
,
Svitsiankou, I. E.
,
Shulenkova, V. A.
,
Muravitskaya, E. V.
,
Alexeev, A. N.
,
Petrov, S. I.
,
Yablonskii, G. P.
Published in
Semiconductors (Woodbury, N.Y.)
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Technology for Determining the Effectiveness of Represantative Offices of the Companies Abroad
by
Kevorkova, Z.A.
,
Kosolapova, M.V.
,
Muravitskaya, N.K.
,
Amirova, R.I.
,
Lukyanenko, G.I.
,
Glebkova, I.Y.
Published in
International journal of innovative technology and exploring engineering
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MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al{sub 2}O{sub 3}
by
Lutsenko, E. V.
,
Rzheutski, M. V.
,
Vainilovich, A. G.
,
Svitsiankou, I. E.
,
Shulenkova, V. A.
,
Muravitskaya, E. V.
,
Alexeev, A. N.
,
Petrov, S. I.
,
Yablonskii, G. P.
Published in
Semiconductors (Woodbury, N.Y.)
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MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al.sub.2O.sub.3
by
Lutsenko, E. V
,
Rzheutski, M. V
,
Vainilovich, A. G
,
Svitsiankou, I. E
,
Shulenkova, V. A
,
Muravitskaya, E. V
,
Alexeev, A. N
Published in
Semiconductors (Woodbury, N.Y.)
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Determination of active region overheating temperature of GaN-based light emitting diodes promising for laser media pumping
by
Lutsenko, E V
,
Pavlovskii, V N
,
Danilchyk, A V
,
Rzheutski, M V
,
Vainilovich, A G
,
Zubialevich, V Z
,
Muravitskaya, A V
,
Yablonskii, G P
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Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties
by
Pavlovskii, V. N.
,
Lutsenko, E. V.
,
Danilchyk, A. V.
,
Zubialevich, V. Z.
,
Muravitskaya, A. V.
,
Yablonskii, G. P.
,
Kalisch, H.
,
Jansen, R. H.
,
Schineller, B.
,
Heuken, M.
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