Highly efficient THz four-wave mixing in doped silicon by Dessmann, Nils, Le, Nguyen H., Eless, Viktoria, Chick, Steven, Saeedi, Kamyar, Perez-Delgado, Alberto, Pavlov, Sergey G., van der Meer, Alexander F. G., Litvinenko, Konstantin L., Galbraith, Ian, Abrosimov, Nikolay V., Riemann, Helge, Pidgeon, Carl R., Aeppli, Gabriel, Redlich, Britta, Murdin, Benedict N.

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Advancements and challenges in strained group-IV-based optoelectronic materials stressed by ion beam treatment by Masteghin, Mateus G, Murdin, Benedict N, Duffy, Dominic A, Clowes, Steven K, Cox, David C, Sweeney, Stephen J, Webb, Roger P

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Giant non-linear susceptibility of hydrogenic donors in silicon and germanium by Le, Nguyen H., Lanskii, Grigory V., Aeppli, Gabriel, Murdin, Benedict N.

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Benchmarking of X‐Ray Fluorescence Microscopy with Ion Beam Implanted Samples Showing Detection Sensitivity of Hundreds of Atoms by Masteghin, Mateus G., Gervais, Toussaint, Clowes, Steven K., Cox, David C., Zelyk, Veronika, Pattammattel, Ajith, Chu, Yong S., Kolev, Nikola, Stock, Taylor J. Z., Curson, Neil J., Evans, Paul G., Stuckelberger, Michael, Murdin, Benedict N.

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Modified pyridine-2,6-dicarboxylate acid ligands for sensitization of near-infrared luminescence from lanthanide ions (Ln3+ = Pr3+, Nd3+, Gd3+, Dy3+, Er3+) by George, Michael R., Critchley, Paul E., Whitehead, George F.S., Bailey, Andrew J., Cuda, Francesco, Murdin, Benedict N., Grossel, Martin C., Curry, Richard J.

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Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors by Masteghin, Mateus G., Tong, Vivian, Schneider, Eleanor B., Underwood, Cameron C. L., Peach, Tomas, Murdin, Benedict N., Webb, Roger P., Clowes, Steven K., Cox, David C.

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First observation of a THz photon echo by Lynch, Stephen A, Greenland, P Thornton, van der Meer, Alexander F G, Murdin, Benedict N, Pidgeon, Carl R, Redlich, Britta, Vinh, Nguyen Q, Aeppli, Gabriel

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Detection Sensitivity Limit of Hundreds of Atoms with X-Ray Fluorescence Microscopy by Masteghin, Mateus G, Toussaint Gervais, Clowes, Steven K, Cox, David C, Zelyk, Veronika, Pattammattel, Ajith, Chu, Yong S, Kolev, Nikola, Stock, Taylor Z, Curson, Neil, Evans, Paul G, Stuckelberger, Michael, Murdin, Benedict N

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Quantum control of phosphorus donor Rydberg states in silicon by Lynch, S A, Greenland, P T, van der Meer, A F G, Murdin, B N, Pidgeon, C R, Redlich, B, Vinh, N Q, Aeppli, G

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