Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem by Markevich, Vladimir P., Vaqueiro-Contreras, Michelle, De Guzman, Joyce T., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R.

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Identification of the mechanism responsible for the boron oxygen light induced degradation in silicon photovoltaic cells by Vaqueiro-Contreras, Michelle, Markevich, Vladimir P., Coutinho, José, Santos, Paulo, Crowe, Iain F., Halsall, Matthew P., Hawkins, Ian, Lastovskii, Stanislau B., Murin, Leonid I., Peaker, Anthony R.

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Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects VnO2 (n from 1 to 3) in Silicon by Murin, Leonid I., Tolkacheva, Ekaterina A., Lastovskii, Stanislau B., Markevich, Vladimir P., Mullins, Jack, Peaker, Anthony R., Svensson, Bengt G.

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Radiation‐induced interstitial carbon atom in silicon: Effect of charge state on annealing characteristics by Lastovskii, Stanislau B., Gusakov, Vasilii E., Markevich, Vladimir P., Peaker, Anthony R., Yakushevich, Hanna S., Korshunov, Fedor P., Murin, Leonid I.

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The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms by Gusakov, Vasilii E., Lastovskii, Stanislau B., Murin, Leonid I., Tolkacheva, Ekaterina A., Khirunenko, Lyudmila I., Sosnin, Mikhail G., Duvanskii, Andrei V., Markevich, Vladimir P., Halsall, Matthew P., Peaker, Anthony R., Kolevatov, Ilia, Ayedh, Hussein M., Monakhov, Edouard V., Svensson, Bengt G.

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Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects V n O 2 (n from 1 to 3) in Silicon by Murin, Leonid I., Tolkacheva, Ekaterina A., Lastovskii, Stanislau B., Markevich, Vladimir P., Mullins, Jack, Peaker, Anthony R., Svensson, Bengt G.

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Radiation damage in silicon exposed to high-energy protons by Davies, Gordon, Hayama, Shusaku, Murin, Leonid, Krause-Rehberg, Reinhard, Bondarenko, Vladimir, Sengupta, Asmita, Davia, Cinzia, Karpenko, Anna

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Effect of pressure on oxygen diffusion jump in Si: quantum-chemical simulations by Gusakov, Vasilii, Murin, Leonid

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Interactions of Cu and Ni Impurities with Vacancy-related Point Defects in Czochralski-grown Si Crystals by Markevich, Vladimir, Peaker, Anthony R., Medvedeva, Irina F., Gusakov, Vasilii E., Murin, Leonid I., Svensson, Bengt G.

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Effect of pressure on oxygen diffusion jump in Si: quantum-chemical simulations by GUSAKOV, Vasilii, MURIN, Leonid

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Radiation damage in silicon exposed to high-energy protons by Davies, Gordon, Hayama, Shusaku, Murin, Leonid, Krause-Rehberg, Reinhard, Bondarenko, Vladimir, Sengupta, Asmita, Davia, Cinzia, Karpenko, Anna, Department of Physics, King's College London, Strand, London WC2R 2LS, United Kingdom and CCLRC Daresbury Laboratory, Daresbury, Warrington, Cheshire, WA4 4AD, Joint Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, 220072 Minsk, Department of Physics, Martin Luther University, 06108 Halle, Department of Physics, Visva-Bharati Central University, Santiniketan-731235, Department of Electronic Engineering, Brunel University, Uxbridge UB8 3PH

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3D modeling and printing for complex biventricular repair of double outlet right ventricle by Brüning, Jan, Kramer, Peter, Goubergrits, Leonid, Schulz, Antonia, Murin, Peter, Solowjowa, Natalia, Kuehne, Titus, Berger, Felix, Photiadis, Joachim, Weixler, Viktoria Heide-Marie

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