Search Results - Murota, Wakana

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  1. 1
    A phenylphthalimide derivative, TC11, induces apoptosis by degrading MCL1 in multiple myeloma cells

    A phenylphthalimide derivative, TC11, induces apoptosis by degrading MCL1 in multiple myeloma cells by Ichikawa, Daiju, Nakamura, Misa, Murota, Wakana, Osawa, Sho, Matsushita, Maiko, Yanagawa, Hiroshi, Hattori, Yutaka

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  2. 2
    A Novel Phthalimide-Derivative, TC11, Induced G2/M Arrest and Apoptosis of High-Risk Myeloma Cells By Interacting with Nucleophosmin1 and α-Tubulin, but Not By Binding to Celeblon

    A Novel Phthalimide-Derivative, TC11, Induced G2/M Arrest and Apoptosis of High-Risk Myeloma Cells By Interacting with Nucleophosmin1 and α-Tubulin, but Not By Binding to Celeblon by Nakamura, Misa, Ichikawa, Daiju, Aida, Shuji, Hashimoto, Nahoko, Murota, Wakana, Uozaki, Ryo, Okayama, Mikio, Fujimori, Kota, Yonemura, Yuko, Tabata, Noriko, Yanagawa, Hiroshi, Matsushita, Maiko, Hattori, Yutaka

    Published in Blood
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  3. 3
    (Invited) Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates

    (Invited) Epitaxial Growth of GeSn Layers on (001), (110), and (111) Si and Ge Substrates by Nakatsuka, Osamu, Taoka, Noriyuki, Asano, Takanori, Yamaha, Takashi, Kurosawa, Masashi, Takeuchi, Wakana, Zaima, Shigeaki

    Published in ECS transactions
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    (Invited) Challenges and Developments in GeSn Process Technology for Si Nanoelectronics

    (Invited) Challenges and Developments in GeSn Process Technology for Si Nanoelectronics by Zaima, Shigeaki, Nakatsuka, Osamu, Taoka, Noriyuki, Kato, Kimihiko, Takeuchi, Wakana, Sakashita, Mitsuo

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    Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1−XSnx Fine Structures by Using Synchrotron X-ray Microdiffraction

    Analysis of Microscopic Strain and Crystalline Structure in Ge/Ge1−XSnx Fine Structures by Using Synchrotron X-ray Microdiffraction by Ike, Shinichi, Nakatsuka, Osamu, Inuzuka, Yuki, Washizu, Tomoya, Takeuchi, Wakana, Imai, Yasuhiko, Kimura, Shigeru, Zaima, Shigeaki

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  6. 6
    Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface

    Reduction of Interface States Density Due to Post Oxidation with Formation of AlGeO Layer at Al2O3/Ge Interface by Shibayama, Shigehisa, Kato, Kimihiko, Sakashita, Mitsuo, Takeuchi, Wakana, Taoka, Noriyuki, Nakatsuka, Osamu, Zaima, Shigeaki

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