Search Results - Muthuraj, Vineeta R.

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  1. 1
    N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization

    N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization by Muthuraj, Vineeta R., Liu, Wenjian, Collins, Henry, Li, Weiyi, Hamwey, Robert, DenBaars, Steven P., Mishra, Umesh K., Keller, Stacia

    Published in Crystals (Basel)
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  2. 2
    Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition

    Properties of high to ultrahigh Si-doped GaN grown at 550 °C by flow modulated metalorganic chemical vapor deposition by Muthuraj, Vineeta R., Reilly, Caroline E., Mates, Thomas, Nakamura, Shuji, DenBaars, Steven P., Keller, Stacia

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  3. 3
    Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition

    Inverted N-polar blue and blue-green light emitting diodes with high power grown by metalorganic chemical vapor deposition by Muthuraj, Vineeta R., Reilly, Caroline E., Mates, Thomas, Keller, Stacia, Nakamura, Shuji, DenBaars, Steven P.

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  4. 4
    Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

    Demonstration of 82% relaxed In0.18Ga0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy by Khan, Kamruzzaman, Wurm, Christian, Collins, Henry, Muthuraj, Vineeta R., Khan, Md Irfan, Lee, Cindy, Keller, Stacia, Ahmadi, Elaheh

    Published in Physica scripta
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  5. 5
    Demonstration of 82% relaxed In 0.18 G a0.82 N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy

    Demonstration of 82% relaxed In 0.18 G a0.82 N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy by Khan, Kamruzzaman, Wurm, Christian, Collins, Henry, Muthuraj, Vineeta R., Khan, Md Irfan, Lee, Cindy, Keller, Stacia, Ahmadi, Elaheh

    Published in Physica scripta
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