First-principles analysis of physical properties anisotropy for the Ag2SiS3 chalcogenide semiconductor by Rudysh, M. Ya, Shchepanskyi, P.A., Fedorchuk, A.O., Brik, M.G., Ma, C.-G., Myronchuk, G.L., Piasecki, M.

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Thallium indium germanium sulphide (TlInGe2S6) as efficient material for nonlinear optical application by Khyzhun, O.Y., Babizhetskyy, V.S., Kityk, I.V., Myronchuk, G.L., Jędryka, J., Lakshminarayana, G., Levytskyy, V.O., Tsisar, O.V., Piskach, L.V., Parasyuk, O.V., El Naggar, A.M., Albassam, A.A., Piasecki, M.

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Preparation, electronic structure and piezooptical properties of solid solutions Tl3PbBr5–xIx by Khyzhun, O.Y., Fochuk, P.M., Fedorchuk, A.O., Piasecki, M., Kityk, I.V., Myronchuk, G.L., Levkovets, S.I., Piskach, L.V., Parasyuk, O.V.

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Photoconductivity relaxation processes in AgCd2GaS4 single crystals by Myronchuk, G.L., Piasecki, M., Krymus, A.S., Kityk, I.V., Vlokh, R.O., Fedorchuk, A.O., Kozer, V.R., Parasyuk, O.V.

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PbGa^sub 2^GeS^sub 6^ crystal as a novel nonlinear optical material: Band structure aspects by Fedorchuk, AO, Parasyuk, OV, Cherniushok, O, Andriyevsky, B, Myronchuk, GL, Khyzhun, OY, Lakshminarayana, G, Jedryka, J, Kityk, IV, ElNaggar, AM, Albassam, AA, Piasecki, M

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Photoinduced Optical Properties Of Tl1−xIn1−xSixSe2 Single Crystals by Myronchuk, G.L., Zamurueva, O.V., Oźga, K., Szota, M., El-Naggar, A.M., Alzayed, N.S., Piskach, L.V., Parasyuk, O.V., Albassam, A.A., Fedorchuk, A.O., Kityk, I.V.

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Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2) by Zamurueva, O.V., Myronchuk, G.L., Oźga, K., Szota, M., El-Naggar, A.M., Albassam, A.A., Parasyuk, O.V., Piskach, L.V., Kityk, I.V.

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