Understanding Consumers' Satisfaction and Loyalty: A Comparative Study of Services in India and Japan by Nagashima, Yoshie, Nagashima, Naoki

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Mobility and Velocity Enhancement Effects of High Uniaxial Stress on Si (100) and (110) Substrates for Short-Channel pFETs by Mayuzumi, Satoru, Yamakawa, Shinya, Kosemura, Daisuke, Takei, Munehisa, Nagata, Kohki, Akamatsu, Hiroaki, Wakabayashi, Hitoshi, Amari, Koichi, Tateshita, Yasushi, Tsukamoto, Masanori, Ohno, Terukazu, Ogura, Atsushi, Nagashima, Naoki

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Novel Damascene Gate Metal--Oxide--Semiconductor Field-Effect Transistors Fabricated by In situ Arsenic- and Boron-Doped Epitaxy by Kikuchi, Yoshiaki, Tateshita, Yasushi, Miyanami, Yuki, Wakabayashi, Hitoshi, Tagawa, Yukio, Nagashima, Naoki

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Empirical Characteristics and Extraction of Overall Variations for 65-nm MOSFETs and Beyond by Kanno, M., Shibuya, A., Matsumura, M., Tamura, K., Tsuno, H., Mori, S., Fukuzaki, Y., Gocho, T., Ansai, H., Nagashima, N.

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Threshold Voltage Modulation Technique using Fluorine Treatment through Atomic Layer Deposition TiN Suitable for Complementary Metal–Oxide–Semiconductor Devices by Tai, Kaori, Yamaguchi, Shinpei, Tanaka, Kazuki, Hirano, Tomoyuki, Oshiyama, Itaru, Kazi, Salam, Ando, Takashi, Nakata, Masashi, Yamanaka, Mayumi, Yamamoto, Ryo, Kanda, Sayuri, Tateshita, Yasushi, Wakabayashi, Hitoshi, Tagawa, Yukio, Tukamoto, Masanori, Iwamoto, Hayato, Saito, Masaki, Nagashima, Naoki, Kadomura, Shingo

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How Are Shopping Experiences Evaluated? A Methodological Proposal to Understand Consumers as Shoppers by Nagashima, Naoki, Nag, Biswajit, Nagashima, Yoshie

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Reliable Assessment of Progressive Breakdown in Ultrathin MOS Gate Oxides Toward Accurate TDDB Evaluation by Tsujikawa, S, Kanno, M, Nagashima, N

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A FancD2-Monoubiquitin Fusion Reveals Hidden Functions of Fanconi Anemia Core Complex in DNA Repair by Matsushita, Nobuko, Kitao, Hiroyuki, Ishiai, Masamichi, Nagashima, Naoki, Hirano, Seiki, Okawa, Katsuya, Ohta, Tomohiko, Yu, David S., McHugh, Peter J., Hickson, Ian D., Venkitaraman, Ashok R., Kurumizaka, Hitoshi, Takata, Minoru

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Dual Metal/High-$k$ Gate-Last Complementary Metal--Oxide--Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness by Kikuchi, Yoshiaki, Wakabayashi, Hitoshi, Tsukamoto, Masanori, Nagashima, Naoki

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Dual Metal/High- k Gate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness by Kikuchi, Yoshiaki, Wakabayashi, Hitoshi, Tsukamoto, Masanori, Nagashima, Naoki

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Channel-Stress Enhancement Characteristics for Scaled pMOSFETs by Using Damascene Gate With Top-Cut Compressive Stress Liner and eSiGe by Mayuzumi, S., Yamakawa, S., Kosemura, D., Takei, M., Tateshita, Y., Wakabayashi, H., Tsukamoto, M., Ohno, T., Ogura, A., Nagashima, N.

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High-Performance Metal/High- k n- and p-MOSFETs With Top-Cut Dual Stress Liners Using Gate-Last Damascene Process on (100) Substrates by Mayuzumi, S., Yamakawa, S., Tateshita, Y., Hirano, T., Nakata, M., Yamaguchi, S., Tai, K., Wakabayashi, H., Tsukamoto, M., Nagashima, N.

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Effects of Channel Width on Stress Enhancement for Damascene-Gate nFETs With Top-Cut Tensile-Stress Liner by Mayuzumi, S., Yamakawa, S., Wakabayashi, H., Tateshita, Y., Tsukamoto, M., Ohno, T., Nagashima, N.

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Planar Metal--Oxide--Semiconductor Field-Effect Transistors with Raised Source and Drain Extensions Fabricated by In situ Boron-Doped Selective Silicon Epitaxy by Kikuchi, Yoshiaki, Tateshita, Yasushi, Miyanami, Yuki, Wakabayashi, Hitoshi, Tagawa, Yukio, Nagashima, Naoki

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Programming conditions for silicided poly-Si or copper electrically programmable fuses by Suto, H., Mori, S., Kanno, M., Nagashima, N.

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Autologous blood transfusion in patients with hepatocellular carcinoma undergoing hepatectomy by Shinozuka, Nozomi, Koyama, Isamu, Arai, Tsunenori, Numajiri, Yoshikatsu, Watanabe, Takuji, Nagashima, Naoki, Matsumoto, Takashi, Ohata, Masahiko, Anzai, Haruyuki, Omoto, Ryozo

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Study of Electrically Programmable Fuses through Series of I-V Measurements by Suto, H., Mori, S., Kanno, M., Nagashima, N.

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Tinv Scaling and Gate Leakage Reduction for n-Type Metal Oxide Semiconductor Field Effect Transistor with HfSi x /HfO 2 Gate Stack by Interfacial Layer Formation Using Ozone–Water-... by Oshiyama, Itaru, Tai, Kaori, Hirano, Tomoyuki, Yamaguchi, Shinpei, Tanaka, Kazuaki, Hagimoto, Yoshiya, Uemura, Takayuki, Ando, Takashi, Watanabe, Koji, Yamamoto, Ryo, Kanda, Saori, Wang, Junli, Tateshita, Yasushi, Wakabayashi, Hitoshi, Tagawa, Yukio, Tsukamoto, Masanori, Iwamoto, Hayato, Saito, Masaki, Oshima, Masaharu, Toyoda, Satoshi, Nagashima, Naoki, Kadomura, Shingo

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Novel Process Development for Bilayer Embedded SiGe Source/Drain Formation by Miyanami, Yuki, Ota, Kazunobu, Shinyama, Takashi, Owa, Yu, Katagiri, Takahiro, Horiuchi, Atsushi, Hagimoto, Yoshiya, Watanabe, Koji, Ikuta, Tetsuya, Terauchi, Sanae, Nagaoka, Kojiro, Fujita, Shigeru, Naruse, Hiroshi, Mizushima, Ichiro, Iwamoto, Hayato, Nagashima, Naoki, Kadomura, Shingo

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Decreased effect of immunosuppression on immunocompetence in African-Americans after kidney and liver transplantation by Nagashima, Naoki, Watanabe, Takuji, Nakamura, Michio, Shalabi, Ahmed, Burdick, James F

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