A self-aligned gate III-V heterostructure FET process for ultrahigh-speed digital and mixed analog/digital LSI/VLSI circuits by Akinwande, A.I., Ruden, P.P., Vold, P.J., Han, C.-J., Grider, D.E., Narum, D.H., Nohava, T.E., Nohava, J.C., Arch, D.K.

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High temperature performance and operation of HFETs by Wilson, C.D., O'Neill, A.G., Baier, S.M., Nohava, J.C.

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A 500-MHz 16×16 complex multiplier using self-aligned gate GaAs heterostructure FET technology by AKINTUNDE IBITAYO AKINWANDE, MACTAGGART, I. R, BETZ, B. K, GRIDER, D. E, LANGE, T. H, NOHAVA, J. C, TETZLAFF, D. E, ARCH, D. K

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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure field effect transistors by Ruden, P.P., Shur, M., Akinwande, A.I., Nohava, J.C., Grider, D.E., Baek, J.

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AlGaAs/InGaAs/GaAs quantum well doped channel heterostructure fieldeffects transistors by RUDEN, P. P, SHUR, M, AKINWANDE, A. I, NOHAVA, J. C, GRIDER, D. E, BAEK, J

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A 500-MHz 1616 complex multiplier using self-aligned gate GaAs heterostructure FET technology by Akinwande, A.I., MacTaggart, I.R., Betz, B.K., Grider, D.E., Lange, T.H., Nohava, J.C., Tetzlaff, D.E., Arch, D.K.

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Complementary III-V heterostructure FETs for low power integrated circuits by Akinwande, A.I., Ruden, P.P., Grider, D.E., Nohava, J.C., Nohava, T.E., Joslyn, P.D., Breezley, J.E.

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Heavy ion SEU immunity of a GaAs complementary HIGFET circuit fabricated on a low temperature grown buffer layer by Marshall, P.W., Dale, C.J., Weatherford, T., Carts, M., McMorrow, D., Peczalski, A., Baier, S., Nohava, J., Skogen, J.

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Electron velocity saturation in heterostructure field-effect transistors by Han, C.-J., Ruden, P.P., Nohava, T.E., Narum, D.H., Grider, D.E., Newstrom, K., Joslyn, P., Shur, M.S.

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Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes by Brown, J.D., Yu, Zhonghai, Matthews, J., Harney, S., Boney, J., Schetzina, J.F., Benson, J.D., Dang, K.W., Terrill, C., Nohava, Thomas, Yang, Wei, Krishnankutty, Subash

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A complementary III–V heterostructure field effect transistor technology for high temperature integrated circuits by Wilson, Craig, O'Neill, Anthony, Baier, Steven, Nohava, James

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Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes by Brown, J D, Yu, Zhonghai, Matthews, J, Harney, S, Boney, J, Schetzina, J F, Benson, J D, Dang, K W, Terrill, C, Nohava, Thomas, Yang, Wei, Krishnankutty, Subash

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Velocity saturation effect in heterostructure field effect transistors by Han, C.J., Ruden, P.P., Nohava, T., Narum, D., Grider, D., Newstrom, K., Joslyn, P., Shur, M.

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