Search Results - Nakasaki, Ryuusuke

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    Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition

    Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition by Nakasaki, Ryuusuke, Hashizume, Tamotsu, Hasegawa, Hideki

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    X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution

    X-ray photoelectron spectroscopy characterization of AlGaN surfaces exposed to air and treated in NH4OH solution by Hashizume, Tamotsu, Ootomo, Shin-ya, Nakasaki, Ryuusuke, Oyama, Susumu, Kihara, Michio

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    Facet preferential growth of self-assembled InAs dots on patterned GaAs substrates

    Facet preferential growth of self-assembled InAs dots on patterned GaAs substrates by Yoh, Kanji, Saitoh, Toshiya, Tanimura, Arata, Nakasaki, Ryuusuke, Kazama, Hironobu

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