Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n -type GaN epilayers by Cheong, M. G., Kim, K. S., Oh, C. S., Namgung, N. W., Yang, G. M., Hong, C.-H., Lim, K. Y., Suh, E.-K., Nahm, K. S., Lee, H. J., Lim, D. H., Yoshikawa, A.

Get full text

Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition by Cheong, M. G., Kim, K. S., Kim, C. S., Choi, R. J., Yoon, H. S., Namgung, N. W., Suh, E.-K., Lee, H. J.

Get full text

Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD by Cheong, M.G, Kim, K.S, Namgung, N.W, Han, M.S, Yang, G.M, Hong, C.-H, Suh, E.-K, Lim, K.Y, Lee, H.J, Yoshikawa, A

Get full text

Genetic association of DRD2 polymorphisms with anxiety scores among alcohol-dependent patients by Joe, Keun-Ho, Kim, Dai-Jin, Park, Byung Lae, Yoon, Sujung, Lee, Hae-Kook, Kim, Tae-Suk, Cheon, Young-Hoon, Gwon, Do-Hoon, Cho, Sung-Nam, Lee, Hye Won, NamGung, Suk, Shin, Hyoung Doo

Get full text

Decay constants and semileptonic decays of heavy mesons in the relativistic quark model by Hwang, DS, Kim, CS, Wuk, N

Get full text