Fabrication of 5-20 nm thick β -W films by Narasimham, Avyaya J., Medikonda, Manasa, Matsubayashi, Akitomo, Khare, Prasanna, Chong, Hyuncher, Matyi, Richard J., Diebold, Alain, LaBella, Vincent P.

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Pulsed-N2 assisted growth of 5-20 nm thick β -W films by Narasimham, Avyaya J., Green, Avery, Matyi, Richard J., Khare, Prasanna, Vo, Tuan, Diebold, Alain, LaBella, Vincent P.

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Relating spatially resolved maps of the Schottky barrier height to metal/semiconductor interface composition by Balsano, Robert, Durcan, Chris, Matsubayashi, Akitomo, Narasimham, Avyaya J., LaBella, Vincent P.

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Nanoscale Schottky barrier mapping of thermally evaporated and sputter deposited W/Si(001) diodes using ballistic electron emission microscopy by Nolting, Westly, Durcan, Chris, Narasimham, Avyaya J., LaBella, Vincent P.

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Economical rotatable holder for magnetotransport measurements by Narasimham, Avyaya J., Pennock, Daniel, Potter, Graham J., Taylor, Brian, LaBella, Vincent P.

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1/f Noise analysis of Hafnium Oxide based ReRAM devices using ac + dc measurement technique by Mahmud, Niaz, Narasimham, Avyaya J., Lloyd, J. R.

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Pulsed-N{sub 2} assisted growth of 5-20 nm thick β-W films by Narasimham, Avyaya J., Green, Avery, Matyi, Richard J., Khare, Prasanna, Vo, Tuan, Diebold, Alain, LaBella, Vincent P.

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Weak dependence of phase fraction and dopant concentration in \{beta}, {\alpha} phase mixture of W by Narasimham, Avyaya J, Sayed, Farheen N, Adusumilli, Praneet, Novak, Steve, LaBella, Vincent P

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