The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors by Kovchavtsev, A. P., Tsarenko, A. V., Guzev, A. A., Aksenov, M. S., Polovinkin, V. G., Nastovjak, A. E., Valisheva, N. A.

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Mercury cadmium telluride surface passivation by the thin alumina film atomic-layer deposition by Kovchavtsev, A. P., Sidorov, G. Yu, Nastovjak, A. E., Tsarenko, A. V., Sabinina, I. V., Vasilyev, V. V.

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Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance by Kovchavtsev, A. P., Aksenov, M. S., Tsarenko, A. V., Nastovjak, A. E., Pogosov, A. G., Pokhabov, D. A., Tereshchenko, O. E., Valisheva, N. A.

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Development of the method of temperature calibration of infrared focal plane arrays in the wide range of temperatures by Nastovjak, A.E.

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Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations by Tsamo, Guy, Nastovjak, Alla G., Shwartz, Nataliya L., Hoggan, Philip E., Robert-Goumet, Christine, Pimpinelli, Alberto, Petit, Matthieu, Ranguis, Alain, Gardes, Emmanuel, Sall, Mamour, Bideux, Luc, Monier, Guillaume

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Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth by Nastovjak, A. G., Shwartz, N. L., Emelyanov, E. A., Petrushkov, M. O., Vasev, A. V., Putyato, M. A., Preobrazhenskii, V. V.

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A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates by Emelyanov, E. A., Nastovjak, A. G., Petrushkov, M. O., Esin, M. Yu, Gavrilova, T. A., Putyato, M. A., Schwartz, N. L., Shvets, V. A., Vasev, A. V., Semyagin, B. R., Preobrazhenskii, V. V.

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Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations by Tsamo, Guy, Nastovjak, Alla G, Shwartz, Nataliya L, Hoggan, Philip E, Robert-Goumet, Christine, Pimpinelli, Alberto, Petit, Matthieu, Ranguis, Alain, Gardes, Emmanuel, Sall, Mamour, Bideux, Luc, Monier, Guillaume

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Mechanisms of nanowhisker formation: Monte Carlo simulation by Nastovjak, A. G., Neizvestny, I. G., Shwartz, N. L., Sheremet, E. S.

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Gauss-Quadrature rule in narrow band MIS structures modeling by Nastovjak, A.E., Polovinkin, V.G.

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Investigation of generation process in narrowband MIS structures by Nastovjak, A.E., Polovinkin, V.G.

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Reconstruction of the form of a surface of hybrid photoreception modules by Nastovjak

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