Search Results - Nath, Digbijoy Neelim

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  1. 1
    Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

    Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces by Hung, Ting-Hsiang, Krishnamoorthy, Sriram, Esposto, Michele, Neelim Nath, Digbijoy, Sung Park, Pil, Rajan, Siddharth

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  2. 2
    Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors

    Meandering Gate Edges for Breakdown Voltage Enhancement in AlGaN/GaN High Electron Mobility Transistors by Kumar, Sandeep, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim

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  3. 3
    Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH  > 5V and On‐Current > 0.5 A mm −1

    Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with V TH  > 5V and On‐Current > 0.5 A mm −1 by Kumar, Sandeep, Vura, Sandeep, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim

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  4. 4
    Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH>5V and On‐Current >0.5Amm−1

    Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH>5V and On‐Current >0.5Amm−1 by Kumar, Sandeep, Vura, Sandeep, Surani Bin Dolmanan, Tripathy, Sudhiranjan, Rangarajan Muralidharan, Digbijoy Neelim Nath

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  5. 5
    Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On‐Current > 0.5 A mm−1

    Deep Submicron Normally Off AlGaN/GaN MOSFET on Silicon with VTH > 5V and On‐Current > 0.5 A mm−1 by Kumar, Sandeep, Vura, Sandeep, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim

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  6. 6
    UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

    UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107 by Kumar, Sandeep, Anamika Singh Pratiyush, Surani Bin Dolmanan, Tripathy, Sudhiranjan, Rangarajan Muralidharan, Digbijoy Neelim Nath

    Published in arXiv.org
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  7. 7
    Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al x Ga 1– x N/GaN High Electron Mobility Transistor Structures on Si (111)

    Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al x Ga 1– x N/GaN High Electron Mobility Transistor Structures on Si (111) by Kumar, Sandeep, Pratiyush, Anamika Singh, Dolmanan, Surani Bin, Tan, Hui Ru, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim

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  8. 8
    Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al x Ga1–x N/GaN High Electron Mobility Transistor Structures on Si (111)

    Optically Coupled Electrically Isolated, Monolithically Integrated Switch Using Al x Ga1–x N/GaN High Electron Mobility Transistor Structures on Si (111) by Kumar, Sandeep, Pratiyush, Anamika Singh, Dolmanan, Surani Bin, Tan, Hui Ru, Tripathy, Sudhiranjan, Muralidharan, Rangarajan, Nath, Digbijoy Neelim

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  9. 9
    Electron mobility in few-layer MoxW1-xS2

    Electron mobility in few-layer MoxW1-xS2 by Chandrasekar, Hareesh, Digbijoy Neelim Nath

    Published in arXiv.org
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