Search Results - Nayeem, Mustayeen B.

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    The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology

    The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology by Haugerud, Becca M., Nayeem, Mustayeen B., Krithivasan, Ramkumar, Lu, Yuan, Zhu, Chendong, Cressler, John D., Belford, Rona E., Joseph, Alvin J.

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    Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology

    Mechanical planar biaxial strain effects in Si/SiGe HBT BiCMOS technology by Nayeem, M.B., Haugerud, B.M., Krithivasan, R., Yuan Lu, Chendong Zhu, Belford, R.E., Cressler, J.D., Joseph, A.J.

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    Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits

    Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits by Krithivasan, R., Marshall, P.W., Nayeem, M., Sutton, A.K., Wei-Min Kuo, Haugerud, B.M., Najafizadeh, L., Cressler, J.D., Carts, M.A., Marshall, C.J., Hansen, D.L., Jobe, K.-C.M., McKay, A.L., Guofu Niu, Reed, R., Randall, B.A., Burfield, C.A., Lindberg, M.D., Gilbert, B.K., Daniel, E.S.

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