Temperature Resolution of Pb1−xSnxTe:In-based photosensing film structures under illumination with blackbody radiation by Ischenko, Denis V., Klimov, Alexander E., Neizvestny, Igor G., Paschin, Nikolai S., Sherstyakova, Valentina N., Shumsky, Vladimir N.

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Influence of schwoebel barrier and diffusion anisotropy on step density oscillation amplitude during epitaxial growth by NEIZVESTNY, I. G, SHWARTZ, N. L, YANOVITSKAJA, Z. Sh

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The ROSAT Bright Survey: II. Catalogue of all high-galactic latitude RASS sources with PSPC countrate CR > 0.2 s-1 by Schwope, A.D., Hasinger, G., Lehmann, I., Schwarz, R., Brunner, H., Neizvestny, S., Ugryumov, A., Balega, Yu, Trümper, J., Voges, W.

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Examination of nanotube growth conditions by Monte Carlo simulation by Sheremet, E.S., Nastovjak, A.G., Neizvestny, I.G., Shwartz, N.L.

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Structural parameters and morphology of a subsample of BCGs from the First and Second Byurakan Surveys by Kniazev, A Y, Pramsky, A G, Lipovetsky, V A, Pustilnik, SA, Neizvestny, SI, Ugryumov, A V, Richter, G

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Effect of substrate-drop parameters on nanowhiskers morphology by Nastovjak, A.G., Neizvestny, I.G., Shwartz, N.L., Sheremet, E.S., Yanovitskaja, Z.Sh

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Determination of the susceptibility mass of heavy holes in Pb1-xSnxTe compounds by plasma reflection spectra by NEIZVESTNY, I. G, PUSEP, Y. A, SINYUKOV, M. P

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Simulation of surface relief effect on ALD process by NEIZVESTNY, I. G, SHWARTZ, N. L, YANOVITSKAJA, Z. Sh, ZVEREV, A. V

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Simulation of trench filling process by Gutova, Neizvestny, Shwartz, Yanovitskaja, Zverev

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Kinetic Monte Carlo simulation of thin film morphology evolution during growth by Brunev, D.V., Karpov, A.N., Neizvestny, I.G., Shwartz, N.L., Yanovitskaja, Z.S., Zverev, A.V.

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Germanium MIS structures by Rzhanov, A.V., Neizvestny, I.G.

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Influence of Schwoebel barriers and surface diffusion anisotropy on surface relief evolution during epitaxial growth (simulation) by Brunev, D.V., Neizvestny, I.G., Shwartz, N.L., Yanovitskaya, Z.S.

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Photometry and spectroscopy of two compact groups of galaxies SH 354 and SH 355 by Tiersch, H., Oleak, H., Stoll, D., Neizvestny, S., Amirkhanian, A. S., Egikian, A. G.

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Determination of the susceptibility mass of heavy holes in Pb 1− xSn xTe compounds by plasma reflection spectra by Neizvestny, I.G., Pusep, Yu.A., Sinyukov, M.P.

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3D-model of epitaxial growth on porous {111} and {100} Si surfaces by NEIZVESTNY, I. G, SHWARTZ, N. L, YANOVITSKAYA, Z. Sh, ZVEREV, A. V

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Interlayer atomic diffusion as the reason for self-assembled quantum dot formation by BRUNEV, D. V, NEIZVESTNY, I. G, SHWARTZ, N. L, YANOVITSKAYA, Z. Sh

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Schwoebel barriers and quantum dot lateral size equalization during epitaxial growth by BRUNEV, D. V, NEIZVESTNY, I. G, SHWARTZ, N. L, YANOVITSKAJA, Z. Sh

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Monte Carlo simulation of steps behavior on Si(111) surface during sublimation by NEIZVESTNY, I. G, SHWARTZ, N. L, YANOVITSKAJA, Z. Sh, ZVEREV, A. V

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Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties by NEIZVESTNY, I. G, SUPRUN, S. P, SHUMSKY, V. N, TALOCHKIN, A. B, FEDOSENKO, E. V, BURBAEV, T. M, KURBATOV, V. A

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Desynchronization mode of 2D-island creation on the vicinal surface during MBE growth by YANOVITSKAYA, Z. Sh, NEIZVESTNY, I. G, SHWARTZ, N. L, KATKOV, M. I, RYZHENKOV, I. P

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