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    59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator

    59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator by Newsom, Tonglin L., Allemang, Christopher R., Cho, Tae H., Dasgupta, Neil P., Peterson, Rebecca L.

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    59.9 mV∙dec-1 Subthreshold Swing Achieved in Zinc Tin Oxide TFTs with in situ Atomic Layer Deposited Al2O3 Gate Insulator

    59.9 mV∙dec-1 Subthreshold Swing Achieved in Zinc Tin Oxide TFTs with in situ Atomic Layer Deposited Al2O3 Gate Insulator by Newsom, Tonglin L., Allemang, Christopher R., Cho, Tae H., Dasgupta, Neil P., Peterson, Rebecca L.

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