Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In0.18Al0.82N/GaN-on-Si by Liu, Y., Singh, S. P., Kyaw, L. M., Bera, M. K., Ngoo, Y. J., Tan, H. R., Tripathy, S., Lo, G. Q., Chor, E. F.

Get full text

Positive Threshold-Voltage Shift of Y2O3 Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs by Bera, M. K., Liu, Y., Kyaw, L. M., Ngoo, Y. J., Singh, S. P., Chor, E. F.

Get full text

Low Thermal Budget Au-Free Hf-Based Ohmic Contacts on InAlN/GaN Heterostructures by Liu, Yi, Kyaw, Lwin Min, Bera, Milan Kumar, Singh, Sarab Preet, Ngoo, Yi Jie, Lo, Guo Qiang, Chor, Eng Fong

Get full text

Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget by Bera, Milan Kumar, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Singh, Sarab Preet, Chor, Eng Fong

Get full text

InxAl1-xN/AlN/GaN High Electron Mobility Transistor Structures on 200 mm Diameter Si(111) Substrates with Au-Free Device Processing by Tripathy, S., Kyaw, L. M., Dolmanan, S. B., Ngoo, Y. J., Liu, Y., Bera, M. K., Singh, S. P., Tan, H. R., Bhat, T. N., Chor, E. F.

Get full text

Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrate with ZrO 2 Passivation by Kyaw, Lwin Min, Liu, Yi, Bera, Milan Kumar, Ngoo, Yi Jie, Tripathy, Sudhiranjan, Chor, Eng Fong

Get full text

Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures by Singh, Sarab Preet, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Bera, Milan Kumar, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Chor, Eng Fong

Get full text

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In 0.18 Al 0.82 N/GaN-on-Si by Liu, Y., Singh, S. P., Kyaw, L. M., Bera, M. K., Ngoo, Y. J., Tan, H. R., Tripathy, S., Lo, G. Q., Chor, E. F.

Get full text

Positive Threshold-Voltage Shift of Y 2 O 3 Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs by Bera, M. K., Liu, Y., Kyaw, L. M., Ngoo, Y. J., Singh, S. P., Chor, E. F.

Get full text

In x Al 1-x N/AlN/GaN High Electron Mobility Transistor Structures on 200 mm Diameter Si(111) Substrates with Au-Free Device Processing by Tripathy, S., Kyaw, L. M., Dolmanan, S. B., Ngoo, Y. J., Liu, Y., Bera, M. K., Singh, S. P., Tan, H. R., Bhat, T. N., Chor, E. F.

Get full text

Error analysis and compensation of multipole resolvers by Mingji, Liu, Yu, Yao, Jibin, Zou, Yongping, Lu, Livingstone, Ngoo, Wenxue, Gao

Get full text