Search Results - Ngoo, Yi Jie

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  1. 1
    Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage

    Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage by Liu, Yi, Singh, Sarab Preet, Ngoo, Yi Jie, Kyaw, Lwin Min, Bera, Milan Kumar, Lo, Quo Qiang, Chor, Eng Fong

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  2. 2
    Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT

    Influence of PECVD deposited SiNx passivation layer thickness on In0.18Al0.82N/GaN/Si HEMT by Singh, Sarab Preet, Liu, Yi, Ngoo, Yi Jie, Kyaw, Lwin Min, Bera, Milan Kumar, Dolmanan, S B, Tripathy, Sudhiranjan, Chor, Eng Fong

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  3. 3
    Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT

    Influence of PECVD deposited SiN x passivation layer thickness on In 0.18 Al 0.82 N/GaN/Si HEMT by Singh, Sarab Preet, Liu, Yi, Ngoo, Yi Jie, Kyaw, Lwin Min, Bera, Milan Kumar, Dolmanan, S B, Tripathy, Sudhiranjan, Chor, Eng Fong

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  4. 4
    Influence of PECVD deposited SiN sub(x) passivation layer thickness on In sub(0.18)Al sub(0.82)N/GaN/Si HEMT

    Influence of PECVD deposited SiN sub(x) passivation layer thickness on In sub(0.18)Al sub(0.82)N/GaN/Si HEMT by Singh, Sarab Preet, Liu, Yi, Ngoo, Yi Jie, Kyaw, Lwin Min, Bera, Milan Kumar, Dolmanan, S B, Tripathy, Sudhiranjan, Chor, Eng Fong

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  5. 5
    Thickness Dependent Electrical Characteristics of InAlN/GaN-On-Si MOSHEMTs with Y 2 O 3 Gate Dielectric and Au-Free Ohmic Contact

    Thickness Dependent Electrical Characteristics of InAlN/GaN-On-Si MOSHEMTs with Y 2 O 3 Gate Dielectric and Au-Free Ohmic Contact by Bera, Milan Kumar, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Chor, Eng Fong

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  6. 6
    Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO 3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget

    Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO 3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget by Bera, Milan Kumar, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Singh, Sarab Preet, Chor, Eng Fong

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  7. 7
    Low Thermal Budget Au-Free Hf-Based Ohmic Contacts on InAlN/GaN Heterostructures

    Low Thermal Budget Au-Free Hf-Based Ohmic Contacts on InAlN/GaN Heterostructures by Liu, Yi, Kyaw, Lwin Min, Bera, Milan Kumar, Singh, Sarab Preet, Ngoo, Yi Jie, Lo, Guo Qiang, Chor, Eng Fong

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  8. 8
    Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget

    Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget by Bera, Milan Kumar, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Singh, Sarab Preet, Chor, Eng Fong

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  9. 9
    Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrate with ZrO 2 Passivation

    Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrate with ZrO 2 Passivation by Kyaw, Lwin Min, Liu, Yi, Bera, Milan Kumar, Ngoo, Yi Jie, Tripathy, Sudhiranjan, Chor, Eng Fong

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  10. 10
    Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures

    Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures by Singh, Sarab Preet, Liu, Yi, Kyaw, Lwin Min, Ngoo, Yi Jie, Bera, Milan Kumar, Dolmanan, Surani Bin, Tripathy, Sudhiranjan, Chor, Eng Fong

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