Novel a-IGZO TFT Pixel Driving Circuit Using Hybrid PWM and PAM Method With Lower Power Consumption for Micro-LED Display by Li, Shuai, Wu, Wanming, Chen, Chuanke, Chuai, Xichen, Zhang, Chunyu, Gu, Chen, Liu, Yaxin, Lu, Nianduan, Geng, Di, Li, Ling

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Polaron effect and energetic disorder dependence of Seebeck coefficient in organic transistors by Lu, Nianduan, Li, Ling, Liu, Ming

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Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations by Wang, Ziqi, Lu, Nianduan, Wang, Jiawei, Geng, Di, Wang, Lingfei, Yang, Guanhua

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Revealing Dielectric's Degradation Effect on Charge Transport in Dual Gate In–Ga–Zn–O Thin Film Transistor via Accumulation–Depletion Operation Mode by Chuai, Xichen, Yang, Guanhua, Duan, Xinlv, Lu, Congyan, Lu, Nianduan, Geng, Di, Zhao, Ying, Wang, Jiawei, Li, Ling

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Investigation of charge transport of monolayer polymeric films with field effect tuning and molecular doping for chemiresistive sensing application by Zhou, Zheng, Wang, Jiawei, Xiao, Shaozhu, Jiang, Wenfeng, Lu, Congyan, Chuai, Xichen, Lu, Nianduan, Li, Ling

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Review of Nanoscale Oxide Thin-Film Transistors for Emerging Display and Memory Applications by Li, Weiwei, Geng, Di, Yang, Guanhua, Lu, Nianduan, Li, Ling

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A new surface-potential-based compact model for the MoS2 field effect transistors in active matrix display applications by Cao, Jingchen, Peng, Songang, Liu, Wei, Wu, Quantan, Li, Ling, Geng, Di, Yang, Guanhua, Ji, Zhouyu, Lu, Nianduan, Liu, Ming

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Carrier thermoelectric transport model for black phosphorus field-effect transistors by Lu, Nianduan, Wei, Wei, Chuai, Xichen, Li, Ling, Liu, Ming

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A Dual-Functional IGZO-Based Device With Schottky Diode Rectifying and Resistance Switching Behaviors by Wu, Quantan, Lu, Congyan, Wang, Hong, Cao, Jingchen, Yang, Guanhua, Wang, Jiawei, Gong, Yuxin, Shi, Xuewen, Chuai, Xichen, Lu, Nianduan, Geng, Di, Li, Ling, Liu, Ming

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A unified description of thermal transport performance in disordered organic semiconductors by Lu, Nianduan, Li, Ling, Gao, Nan, Liu, Ming

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Limitation of the concept of transport energy in disordered organic semiconductors by Li, Ling, Lu, Nianduan, Liu, Ming

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Physical model of Seebeck coefficient under surface dipole effect in organic thin-film transistors by Lu, Nianduan, Li, Ling, Banerjee, Writam, Liu, Ming

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Crystal structure and magnetic properties of ultrafine nanocrystalline SmCo3 compound by Lu, Nianduan, Song, Xiaoyan, Zhang, Jiuxing

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Investigation of Hump Behavior of Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor Under Positive Bias Stress by Huzaibi, Hassan Ul, Lu, Nianduan, Billah, Mohammad Masum, Geng, Di, Li, Ling

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Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors by Hu, Ke, Guo, Zean, Wang, Jiawei, Lu, Congyan, Wang, Mingliang, Wang, Tianyuan, Liao, Fuxi, Yang, Guanhua, Lu, Nianduan, Li, Ling

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An analytical Seebeck coefficient model for disordered organic semiconductors by Shi, Xuewen, Lu, Nianduan, Xu, Guangwei, Cao, Jinchen, Han, Zhiheng, Yang, Guanhua, Li, Ling, Liu, Ming

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Synapse behavior characterization and physical mechanism of a TiN/SiO x /p-Si tunneling memristor device by Zhou, Zhenyu, Yan, Xiaobing, Zhao, Jianhui, Lu, Chao, Ren, Deliang, Lu, Nianduan, Wang, Jingjuan, Zhang, Lei, Li, Xiaoyan, Wang, Hong, Zhao, Mengliu

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Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors by Shi, Xuewen, Yang, Guanhua, Wang, Jiawei, Lu, Nianduan, Geng, Di, Li, Ling, Liu, Ming, Lu, Congyan, Duan, Xinlv, Chen, Qian, Ji, Hansai, Su, Yue, Chuai, Xichen, Liu, Dongyang, Zhao, Ying

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Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT by Guo, Jingrui, Zhao, Ying, Yang, Guanhua, Chuai, Xichen, Lu, Wenhao, Liu, Dongyang, Chen, Qian, Duan, Xinlv, Huang, Shijie, Su, Yue, Geng, Di, Lu, Nianduan, Cui, Tao, Jang, Jin, Li, Ling, Liu, Ming

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Short-circuit current model of organic solar cells by Lu, Nianduan, Li, Ling, Sun, Pengxiao, Liu, Ming

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