Design considerations for three-dimensional betavoltaics by Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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Photogalvanic Etching of n-GaN for Three-Dimensional Electronics by Dryden, Daniel M., Nikolic, Rebecca J., Islam, M. Saif

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Demonstration of a Three-Dimensionally Structured Betavoltaic by Murphy, John W., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System by Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC by Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Smooth Bosch Etch for Improved Si Diodes by Voss, Lars F., Qinghui Shao, Conway, Adam M., Reinhardt, Cathy E., Graff, Robert T., Nikolic, Rebecca J.

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Ultrahigh GaN:SiO2 etch selectivity by in situ surface modification of SiO2 in a Cl2-Ar plasma by Frye, Clint D, Donald, Scott B, Reinhardt, Catherine E, Nikolic, Rebecca J, Voss, Lars F, Harrison, Sara E

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Ultradeep electron cyclotron resonance plasma etching of GaN by Harrison, Sara E., Voss, Lars F., Torres, Andrea M., Frye, Clint D., Shao, Qinghui, Nikolić, Rebecca J.

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Experimental determination of gamma-ray discrimination in pillar-structured thermal neutron detectors under high gamma-ray flux by Shao, Qinghui, Conway, Adam M., Voss, Lars F., Radev, Radoslav P., Nikolić, Rebecca J., Dar, Mushtaq A., Cheung, Chin L.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System by Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Numerical Simulations of Pillar Structured Solid State Thermal Neutron Detector: Efficiency and Gamma Discrimination by Conway, A.M., Wang, T.F., Deo, N., Cheung, C.L., Nikolic, R.J.

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Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2 by Frye, Clint D., Kucheyev, Sergei O., Edgar, James H., Voss, Lars F., Conway, Adam M., Shao, Qinghui, Nikolić, Rebecca J.

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Pillar-structured neutron detector based multiplicity system by Murphy, John W., Shao, Qinghui, Voss, Lars F., Kerr, Phil L., Fabris, Lorenzo, Conway, Adam M., Nikolic, Rebecca J.

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Pillar-structured neutron detector based multiplicity system by Murphy, John W., Shao, Qinghui, Voss, Lars F., Kerr, Phil L., Fabris, Lorenzo, Conway, Adam M., Nikolic, Rebecca J.

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Design considerations for three-dimensional betavoltaics by Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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Fabrication Methodology of Enhanced Stability Room Temperature TlBr Gamma Detectors by Conway, A. M., Voss, L. F., Nelson, A. J., Beck, P. R., Laurence, T. A., Graff, R. T., Nikolic, R. J., Payne, S. A., Hadong Kim, Cirignano, L. J., Shah, Kanai

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Electrical and optical gain lever effects in InGaAs double quantum-well diode lasers by Pocha, M.D., Goddard, L.L., Bond, T.C., Nikolic, R.J., Vernon, S.P., Kallman, J.S., Behymer, E.M.

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Analysis of strain in dielectric coated three dimensional Si micropillar arrays by Voss, Lars F., Reinhardt, Cathy E., Graff, Robert T., Conway, Adam M., Shao, Qinghui, Nikolic, Rebecca J., Dar, Mushtaq A., Cheung, Chin L.

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Accelerated Aging in 4H-SiC as a Betavoltaic Semiconductor Using an Electron Beam System by Shao, Qinghui, Voss, Lars F., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Qu, Dongxia, Nikolic, Rebecca J.

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Current Reduction of CdZnTe via Band Gap Engineering by Voss, L. F., Conway, A. M., Nelson, A. J., Beck, P. R., Graff, R. T., Nikolic, R. J., Payne, S. A., Burger, A., Chen, H.

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