Carbon-doped GeTe: A promising material for Phase-Change Memories by Betti Beneventi, G., Perniola, L., Sousa, V., Gourvest, E., Maitrejean, S., Bastien, J.C., Bastard, A., Hyot, B., Fargeix, A., Jahan, C., Nodin, J.F., Persico, A., Fantini, A., Blachier, D., Toffoli, A., Loubriat, S., Roule, A., Lhostis, S., Feldis, H., Reimbold, G., Billon, T., De Salvo, B., Larcher, L., Pavan, P., Bensahel, D., Mazoyer, P., Annunziata, R., Zuliani, P., Boulanger, F.

Get full text

Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells by Cueto, O., Jahan, C., Sousa, V., Nodin, J.F., Syoud, S., Perniola, L., Fantini, A., Maitrejean, S., Toffoli, A., de Salvo, B., Boulanger, F.

Get full text

Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs by Jousseaume, V., Fantini, A., Nodin, J.F., Guedj, C., Persico, A., Buckley, J., Tirano, S., Lorenzi, P., Vignon, R., Feldis, H., Minoret, S., Grampeix, H., Roule, A., Favier, S., Martinez, E., Calka, P., Rochat, N., Auvert, G., Barnes, J.P., Gonon, P., Vallée, C., Perniola, L., De Salvo, B.

Get full text

Comparative study of non-polar switching behaviors of NiO- and HfO 2-based oxide resistive-RAMs by Jousseaume, V., Fantini, A., Nodin, J.F., Guedj, C., Persico, A., Buckley, J., Tirano, S., Lorenzi, P., Vignon, R., Feldis, H., Minoret, S., Grampeix, H., Roule, A., Favier, S., Martinez, E., Calka, P., Rochat, N., Auvert, G., Barnes, J.P., Gonon, P., Vallée, C., Perniola, L., De Salvo, B.

Get full text

Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs by Cabout, T., Perniola, L., Jousseaume, V., Grampeix, H., Nodin, J. F., Toffoli, A., Guillermet, M., Jalaguier, E., Vianello, E., Molas, G., Reimbold, G., De Salvo, B., Diokh, T., Candelier, P., Pirrotta, O., Padovani, A., Larcher, L., Bocquet, M., Muller, C.

Request full text

Fundamental variability limits of filament-based RRAM by Grossi, A., Nowak, E., Zambelli, C., Pellissier, C., Bernasconi, S., Cibrario, G., El Hajjam, K., Crochemore, R., Nodin, J.F., Olivo, P., Perniola, L.

Request full text

Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices by Fantini, A., Perniola, L., Armand, M., Nodin, J.F., Sousa, V., Persico, A., Cluzel, J., Jahan, C., Maitrejean, S., Lhostis, S., Roule, A., Dressler, C., Reimbold, G., De Salvo, B., Mazoyer, P., Bensahel, D., Boulanger, F.

Request full text

On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature by Beneventi, G B, Gourvest, E, Fantini, A, Perniola, L, Sousa, V, Maitrejean, S, Bastien, J C, Bastard, A, Fargeix, A, Hyot, B, Jahan, C, Nodin, J F, Persico, A, Blachier, D, Toffoli, A, Loubriat, S, Roule, A, Lhostis, S, Feldis, H, Reimbold, G, Billon, T, De Salvo, B, Larcher, L, Pavan, P, Bensahel, D, Mazoyer, P, Annunziata, R, Boulanger, F

Request full text

Back-end-of-line integration approaches for resistive memories by Jousseaume, V., Buckley, J., Bernard, Y., Gonon, P., Vallee, C., Mougenot, M., Feldis, H., Minoret, S., Chamiot-Maitral, G., Persico, A., Zenasni, A., Gely, M., Barnes, J.P., Martinez, E., Grampeix, H., Guedj, C., Nodin, J.F., De Salvo, B.

Request full text

Comparative study of non-polar switching behaviors of NiO- and HfO2-based Oxide Resistive-RAMs by Jousseaume, V., Feldis, H., Minoret, S., Grampeix, H., Roule, A., Favier, S., Martinez, E., Calka, P., Rochat, N., Auvert, G., Barnes, J.P., Fantini, A., Gonon, P., Vallee, C., Perniola, L., De Salvo, B., Nodin, J.F., Guedj, C., Persico, A., Buckley, J., Tirano, S., Lorenzi, P., Vignon, R.

Request full text