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Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies
by
Seo, Jihyun
,
Han, Kyoungrok
,
Youn, Taeun
,
Heo, Hye-Eun
,
Jang, Sanghyun
,
Kim, Jongwook
,
Yoo, Honam
,
Hwang, Joowon
,
Yang, Cheolhoon
,
Lee, Heeyoul
,
Kim, Byungkook
,
Choi, Eunseok
,
Noh, Keumhwan
,
Lee, Byoungki
,
Lee, Byungseok
,
Chang, Heehyun
,
Park, Sungkye
,
Ahn, Kunok
,
Lee, Seokkiu
,
Kim, Jinwoong
,
Lee, Seokhee
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Acceptability
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Air Gaps
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Bit Error Rate
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Channels
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Doping
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Endurance
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Flash Memories
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Flash Memory
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Interference
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Logic Gates
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