Search Results - Nordheden

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  1. 21
    EEDF analysis of CCP plasmas using regularized reconstruction analysis of IV characteristics from an RF compensated Langmuir probe

    EEDF analysis of CCP plasmas using regularized reconstruction analysis of IV characteristics from an RF compensated Langmuir probe by ElSaghir, A., Kennedy, C., Shannon, S., Pathak, B., Alexander, J., Nordheden, K.

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  2. 22
    Selective reactive ion etching of GaAs/AlAs in BCl3/SF6 for gate recess

    Selective reactive ion etching of GaAs/AlAs in BCl3/SF6 for gate recess by Lee, Y.-S., Upadhyaya, K., Nordheden, K. J., Kao, M.-Y.

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  3. 23
    HEMT degradation in hydrogen gas

    HEMT degradation in hydrogen gas by Chao, P.C., Kao, M.Y., Nordheden, K., Swanson, A.W.

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  4. 24
    GaAs etch rate enhancement with SF6 addition to BCI3plasmas

    GaAs etch rate enhancement with SF6 addition to BCI3plasmas by NORDHEDEN, K. J, UPADHYAYA, K, LEE, Y.-S, GOGINENI, S. P, KAO, M.-Y

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  5. 25
    GaAs Etch Rate Enhancement with SF[sub 6] Addition to BCl[sub 3] Plasmas

    GaAs Etch Rate Enhancement with SF[sub 6] Addition to BCl[sub 3] Plasmas by Nordheden, K. J., Upadhyaya, K., Lee, Y. -S., Gogineni, S. P., Kao, M. -Y.

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  6. 26
    Triple-crystal x-ray diffraction analysis of reactive ion etched gallium arsenide

    Triple-crystal x-ray diffraction analysis of reactive ion etched gallium arsenide by Wang, V. S., Matyi, R. J., Nordheden, K. J.

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  7. 27
    The effect of oxygen on the etch rate of NF3 discharges

    The effect of oxygen on the etch rate of NF3 discharges by NORDHEDEN, K. J, VERDEYEN, J. T

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  8. 28
    Predictable reactive ion etching of GaAs and AlGaAs in HCl/Ar RF discharges

    Predictable reactive ion etching of GaAs and AlGaAs in HCl/Ar RF discharges by NORDHEDEN, K. J, DILL, T. R, VERDEYEN, J. T

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  9. 29
    Characterization of Plasma Etch Processes for Wide Bandgap Semiconductors

    Characterization of Plasma Etch Processes for Wide Bandgap Semiconductors by Nordheden, Karen J

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  10. 30
    Reactive ion etching of via holes for GaAs HEMTs and MMICs using Cl/sub 2//BCl/sub 3//Ar gas mixtures

    Reactive ion etching of via holes for GaAs HEMTs and MMICs using Cl/sub 2//BCl/sub 3//Ar gas mixtures by Nordheden, K.J., Ferguson, D.W., Smith, P.M.

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  11. 31
    Reactive Ion Etch Initiation Delay in BCl[sub 3]∕SF[sub 6]∕Ar Plasmas Due to Native Oxide Removal in NH[sub 4]OH∕H[sub 2]O

    Reactive Ion Etch Initiation Delay in BCl[sub 3]∕SF[sub 6]∕Ar Plasmas Due to Native Oxide Removal in NH[sub 4]OH∕H[sub 2]O by Nordheden, Karen J.

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  12. 32
    High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures

    High Efficiency, Room Temperature Mid-Infrared Semiconductor Laser Development for IR Countermeasures by Nordheden, Karen J, Olafsen, Linda J

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  13. 33
    The Effect of Oxygen on the Etch Rate of  NF 3 Discharges

    The Effect of Oxygen on the Etch Rate of  NF 3 Discharges by Nordheden, K. J., Verdeyen, J. T.

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  14. 34
    Model for etch depth dependence on GaAs via hole diameter

    Model for etch depth dependence on GaAs via hole diameter by Abraham-Shrauner, Barbara, Nordheden, Karen J., Lee, Yao-Sheng

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  15. 35
    Psychophysiological reactions to understimulation and overstimulation

    Psychophysiological reactions to understimulation and overstimulation by Frankenhaeuser, Marianne, Nordheden, Bo, Myrsten, Anna-Lisa, Post, Birgitta

    Published in Acta psychologica
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  16. 36
    Selective reactive ion etching of GaAs/AlAs in BCl 3 / SF 6 for gate recess

    Selective reactive ion etching of GaAs/AlAs in BCl 3 / SF 6 for gate recess by Lee, Y.-S., Upadhyaya, K., Nordheden, K. J., Kao, M.-Y.

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  17. 37
    Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs

    Very high voltage AlGaAs/InGaAs pseudomorphic power HEMTs by Ming-Yih Kao, Shih-Tsang Fu, Pin Ho, Smith, Chao, Nordheden, Sujane Wang

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  18. 38
    Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl2/BCl3/Ar plasmas

    Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl2/BCl3/Ar plasmas by Nordheden, K. J., Hua, X. D., Lee, Y. S., Yang, L. W., Streit, D. C., Yen, H. C.

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  19. 39
    Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl 2 / BCl 3 / Ar plasmas

    Smooth and anisotropic reactive ion etching of GaAs slot via holes for monolithic microwave integrated circuits using Cl 2 / BCl 3 / Ar plasmas by Nordheden, K. J., Hua, X. D., Lee, Y. S., Yang, L. W., Streit, D. C., Yen, H. C.

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  20. 40
    Manufacturing technology for high performance HBT linear power amplifiers

    Manufacturing technology for high performance HBT linear power amplifiers by Yang, L.W., Komiak, J.J., Smith, D.P., Kao, M.Y., Brozovich, R.S., Nordheden, K.J., Helms, D.R., Houston, D.E., Bardsley, F.R.

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