Device Characteristics of HEMT Structures based on Backgate Contact Method by Norman Fadhil Idham, M., Nurul Afzan, O., Soetedjo, H., Ahmad Ismat, A.R., Sabtu, I., Mohamed Razman, Y., Abdul Fatah, A.M.

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A low phase noise and large tuning range 2.4GHz LC voltage-controlled oscillator by Siti Maisurah, M. H., Nazif Emran, F., Norman, Fadhil Idham M., Abdul Rahim, A. I., Mohamed Razman, Y.

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A 5/6-bit multi-modulus frequency divider in 0.13μm CMOS technology by Maisurah, M. H. Siti, Emran, F. Nazif, Idham, M. Norman Fadhil, Rahim, A. I. Abdul

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A dual-band LC voltage-controlled oscillator in 0.13μm CMOS technology by Maisurah, M. H. Siti, Emran, F. Nazif, Idham, M. Norman Fadhil, Rahim, A. I. Abdul

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Effect of Indium Content in the Channel on the Electrical Performance of Metamorphic High Electron Mobility Transistors by Idham M, N.F., Ahmad Ismat, A.I., Rasidah, S., Asban, D., Razman Y, M., Abdul Fatah, A.M.

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Design and Simulation of Top Illuminated InGaAs PIN Photodetector for Millimeter-Wave Applications by Abd Rahim, Ahmad Ismat, Ibrahim, Mohd Haniff, Rasmi, Amiza, Yusof, Ashaari, Muhammad, Norman Fadhil Idham, Dolah, Asban, Ngah, N.A.

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Design of GaAs-based pseudomorphic HEMTs by 2D device simulations by Rahim, A.I.A., Muhammad, N.F.I., Sanusi, R., Yahya, M.R.

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