Search Results - Numasawa, Yohichiroh

  • Showing 1 - 6 results of 6
Refine Results
  1. 1
    Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor

    Origin of carrier lifetime degradation in floating-zone silicon during a high-temperature process for insulated gate bipolar transistor by Yokogawa, Ryo, Kobayashi, Hiroto, Numasawa, Yohichiroh, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

    Get full text
    Items that this one cites
    Article
    Save to List
    Saved in:
  2. 2
    Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes

    Evaluations of minority carrier lifetime in floating zone Si affected by Si insulated gate bipolar transistor processes by Kobayashi, Hiroto, Yokogawa, Ryo, Kinoshita, Kosuke, Numasawa, Yohichiroh, Ogura, Atsushi, Nishizawa, Shin-ichi, Saraya, Takuya, Ito, Kazuo, Takakura, Toshihiko, Suzuki, Shin-ichi, Fukui, Munetoshi, Takeuchi, Kiyoshi, Hiramoto, Toshiro

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  3. 3
    Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs

    Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs by Takeuchi, Kiyoshi, Fukui, Munetoshi, Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Suzuki, Shinichi, Numasawa, Yohichiroh, Shigyo, Naoyuki, Kakushima, Kuniyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Watanabe, Masahiro, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Saito, Wataru, Nishizawa, Shin-Ichi, Tsukuda, Masanori, Omura, Ichiro, Ohashi, Hiromichi, Hiramoto, Toshiro

    Get full text
    Items that this one cites
    Article
    Save to List
    Saved in:
  4. 4
    Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects

    Nanocrystalline-Si-dot multi-layers fabrication by chemical vapor deposition with H-plasma surface treatment and evaluation of structure and quantum confinement effects by Kosemura, Daisuke, Mizukami, Yuki, Takei, Munehisa, Numasawa, Yohichiroh, Ohshita, Yoshio, Ogura, Atsushi

    Published in AIP advances
    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  5. 5
    Novel liquid cobalt precursor for metal atomic layer deposition

    Novel liquid cobalt precursor for metal atomic layer deposition by Numasawa, Yohichiroh, Machida, Hideaki, Ishikawa, Masato, Sudoh, Hiroshi, Hasegawa, Yosiharu, Lee, Hyunju, Ohshita, Yoshio

    Get full text
    Items that this one cites
    Article
    Save to List
    Saved in:
  6. 6
    3300V Scaled IGBTs Driven by 5V Gate Voltage

    3300V Scaled IGBTs Driven by 5V Gate Voltage by Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Tsukuda, Masanori, Numasawa, Yohichiroh, Satoh, Katsumi, Matsudai, Tomoko, Saito, Wataru, Kakushima, Kuniyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Watanabe, Masahiro, Shigyo, Naoyuki, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Nishizawa, Shin-Ichi, Omura, Ichiro, Ohashi, Hiromichi, Hiramoto, Toshiro

    Request full text
    Conference Proceeding
    Save to List
    Saved in:

Search Tools: