Search Results - OHSHIKA, Katsushi

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  1. 1
    Optimization of SiON film compositions for encapsulation of refractory metal gate GaAs metal-semiconductor field effect transistor

    Optimization of SiON film compositions for encapsulation of refractory metal gate GaAs metal-semiconductor field effect transistor by OHSHIKA, K, YANAZAWA, H, KURODA, J, KAYAMA, S, SASAKI, Y

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  2. 2
    The influence of SiON film composition on HIGFET characteristics

    The influence of SiON film composition on HIGFET characteristics by Ohshika, Katsushi, Kuroda, Jun, Yanazawa, Hiroshi

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  3. 3
    Material analysis on degradation phenomena caused by hot carrier in 0.35 μm WSi Gate GaAs heterostructure insulated Gate field effect transistors

    Material analysis on degradation phenomena caused by hot carrier in 0.35 μm WSi Gate GaAs heterostructure insulated Gate field effect transistors by OHSHIKA, Katsushi, YAMASHITA, Tomoko, FUKUI, Munetoshi, YANAZAWA, Hiroshi, TAKATANI, Shinichiro, MATSUMOTO, Hidetoshi

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  4. 4
    Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFETs

    Generation mechanism of gate leakage current due to reverse-voltage stress in i-AlGaAs/n-GaAs HIGFETs by Takatani, S., Matsumoto, H., Shigeta, J., Ohshika, K., Yamashita, T., Fukui, M.

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  5. 5
    The effect of surface oxidation status on 0.35-μm HIGFET characteristics

    The effect of surface oxidation status on 0.35-μm HIGFET characteristics by Ohshika, Katsushi, Kuroda, Jun, Yanazawa, Hiroshi

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