Modeling Molecular Interactions in Water: From Pairwise to Many-Body Potential Energy Functions by Cisneros, Gerardo Andrés, Wikfeldt, Kjartan Thor, Ojamäe, Lars, Lu, Jibao, Xu, Yao, Torabifard, Hedieh, Bartók, Albert P, Csányi, Gábor, Molinero, Valeria, Paesani, Francesco

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Controlled CVD Growth of Highly ⟨111⟩-Oriented 3C-SiC by Huang, Jing-Jia, Militzer, Christian, Wijayawardhana, Charles, Forsberg, Urban, Ojamäe, Lars, Pedersen, Henrik

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Reduction of Carbon Impurities in Aluminum Nitride from Time-Resolved Chemical Vapor Deposition Using Trimethylaluminum by Rouf, Polla, Sukkaew, Pitsiri, Ojamäe, Lars, Pedersen, Henrik

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Raman and IR Spectra of Ice Ih and Ice XI with an Assessment of DFT Methods by Liu, Yuan, Ojamäe, Lars

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CH-Stretching Vibrational Trends in Natural Gas Hydrates Studied by Quantum-Chemical Computations by Liu, Yuan, Ojamäe, Lars

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C–C Stretching Raman Spectra and Stabilities of Hydrocarbon Molecules in Natural Gas Hydrates: A Quantum Chemical Study by Liu, Yuan, Ojamäe, Lars

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Structures of the I-, II- and H-Methane Clathrates and the Ice−Methane Clathrate Phase Transition from Quantum-Chemical Modeling with Force-Field Thermal Corrections by Lenz, Annika, Ojamäe, Lars

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Surface Structures from NH(3) Chemisorption in CVD and ALD of AlN, GaN, and InN Films by Rönnby, Karl, Pedersen, Henrik, Ojamäe, Lars

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Thermal decomposition of trimethylindium and indium trisguanidinate precursors for InN growth: An ab initio and kinetic modeling study by Damas, Giane B., Rönnby, Karl, Pedersen, Henrik, Ojamäe, Lars

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Growth Mechanism of SiC CVD: Surface Etching by H2, H Atoms, and HCl by Sukkaew, Pitsiri, Danielsson, Örjan, Ojamäe, Lars

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Kinetic modeling of ammonia decomposition at chemical vapor deposition conditions by Rönnby, Karl, Pedersen, Henrik, Ojamäe, Lars

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The Endocyclic Carbon Substituent of Guanidinate and Amidinate Precursors Controlling Atomic Layer Deposition of InN Films by Rouf, Polla, O’Brien, Nathan J, Rönnby, Karl, Samii, Rouzbeh, Ivanov, Ivan G, Ojamäe, Lars, Pedersen, Henrik

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Surface chemical mechanisms of trimethyl aluminum in atomic layer deposition of AlN by Rönnby, Karl, Pedersen, Henrik, Ojamäe, Lars

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Synthesis and Thermal Study of Hexacoordinated Aluminum(III) Triazenides for Use in Atomic Layer Deposition by Samii, Rouzbeh, Zanders, David, Buttera, Sydney C, Kessler, Vadim, Ojamäe, Lars, Pedersen, Henrik, O’Brien, Nathan J

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Understanding indium nitride thin film growth under ALD conditions by atomic scale modelling: From the bulk to the In-rich layer by Damas, Giane B., Rönnby, Karl, Pedersen, Henrik, Ojamäe, Lars

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Synthesis, Structure, and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor Deposition by Samii, Rouzbeh, Fransson, Anton, Mpofu, Pamburayi, Niiranen, Pentti, Ojamäe, Lars, Kessler, Vadim, O’Brien, Nathan J.

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Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species by Sukkaew, Pitsiri, Kalered, Emil, Janzén, Erik, Kordina, Olof, Danielsson, Örjan, Ojamäe, Lars

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Synthesis, Characterization, and Thermal Study of Divalent Germanium, Tin, and Lead Triazenides as Potential Vapor Deposition Precursors by Samii, Rouzbeh, Zanders, David, Fransson, Anton, Bačić, Goran, Barry, Sean T, Ojamäe, Lars, Kessler, Vadim, Pedersen, Henrik, O’Brien, Nathan J

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Hexacoordinated Gallium(III) Triazenide Precursor for Epitaxial Gallium Nitride by Atomic Layer Deposition by Rouf, Polla, Samii, Rouzbeh, Rönnby, Karl, Bakhit, Babak, Buttera, Sydney C, Martinovic, Ivan, Ojamäe, Lars, Hsu, Chih-Wei, Palisaitis, Justinas, Kessler, Vadim, Pedersen, Henrik, O’Brien, Nathan J

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Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3 by Sukkaew, Pitsiri, Danielsson, Örjan, Kordina, Olof, Janzén, Erik, Ojamäe, Lars

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