Search Results - OKAHISA, Takuji

  • Showing 1 - 8 results of 8
Refine Results
  1. 1
    Dislocation reduction in GaN crystal by advanced-DEEP

    Dislocation reduction in GaN crystal by advanced-DEEP by Motoki, Kensaku, Okahisa, Takuji, Hirota, Ryu, Nakahata, Seiji, Uematsu, Koji, Matsumoto, Naoki

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  2. 2
    Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

    Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate by Kensaku Motoki, Kensaku Motoki, Takuji Okahisa, Takuji Okahisa, Naoki Matsumoto, Naoki Matsumoto, Masato Matsushima, Masato Matsushima, Hiroya Kimura, Hiroya Kimura, Hitoshi Kasai, Hitoshi Kasai, Kikurou Takemoto, Kikurou Takemoto, Koji Uematsu, Koji Uematsu, Tetsuya Hirano, Tetsuya Hirano, Masahiro Nakayama, Masahiro Nakayama, Seiji Nakahata, Seiji Nakahata, Masaki Ueno, Masaki Ueno, Daijirou Hara, Daijirou Hara, Yoshinao Kumagai, Yoshinao Kumagai, Akinori Koukitu, Akinori Koukitu, Hisashi Seki, Hisashi Seki

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  3. 3
    Growth and characterization of freestanding GaN substrates

    Growth and characterization of freestanding GaN substrates by Motoki, Kensaku, Okahisa, Takuji, Nakahata, Seiji, Matsumoto, Naoki, Kimura, Hiroya, Kasai, Hitoshi, Takemoto, Kikurou, Uematsu, Koji, Ueno, Masaki, Kumagai, Yoshinao, Koukitu, Akinori, Seki, Hisashi

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  4. 4
    Homoepitaxial growth of cubic GaN by hydride vapor phase epitaxy on cubic GaN/GaAs substrates prepared with gas source molecular beam epitaxy

    Homoepitaxial growth of cubic GaN by hydride vapor phase epitaxy on cubic GaN/GaAs substrates prepared with gas source molecular beam epitaxy by TSUCHIYA, H, OKAHISA, T, HASEGAWA, F, OKUMURA, H, YOSHIDA, S

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  5. 5
    Preparation of large GaN substrates

    Preparation of large GaN substrates by Motoki, Kensaku, Okahisa, Takuji, Nakahata, Seiji, Matsumoto, Naoki, Kimura, Hiroya, Kasai, Hitoshi, Takemoto, Kikurou, Uematsu, Koji, Ueno, Masaki, Kumagai, Yoshinao, Koukitu, Akinori, Seki, Hisashi

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  6. 6
    Effects of NH3 on the growth rate and the surface morphology of GaAs in chloride VPE

    Effects of NH3 on the growth rate and the surface morphology of GaAs in chloride VPE by KOBAYASHI, R, OKAHISA, T, SHIOZAKI, M, HASEGAWA, F

    Get full text
    Items that this one cites
    Items that cite this one
    Article
    Save to List
    Saved in:
  7. 7
    Effects of NH 3 on the growth rate and the surface morphology of GaAs in chloride VPE

    Effects of NH 3 on the growth rate and the surface morphology of GaAs in chloride VPE by Kobayashi, Ryuji, Okahisa, Takuji, Shiozaki, Masaki, Hasegawa, Fumio

    Get full text
    Article
    Save to List
    Saved in:
  8. 8
    Growth and characterization of freestanding GaN substrates

    Growth and characterization of freestanding GaN substrates by MOTOKI, Kensaku, OKAHISA, Takuji, KOUKITU, Akinori, SEKI, Hisashi, NAKAHATA, Seiji, MATSUMOTO, Naoki, KIMURA, Hiroya, KASAI, Hitoshi, TAKEMOTO, Kikurou, UEMATSU, Koji, UENO, Masaki, KUMAGAI, Yoshinao

    Get full text
    Conference Proceeding
    Save to List
    Saved in:

Search Tools: