PO-1067 Personalised FollowUp for patients with head and neck cancer: quality of life and patient experience by Dean, L., Guererro-Urbano, D.T., Oakley, D.C., Lei, D.M.

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Design considerations for 1.06-μm InGaAsP-InP geiger-mode avalanche photodiodes by DONNELLY, Joseph P, FELLOW, Life, HOPMAN, Pablo I, JENSEN, Katharine Estelle, SMITH, Gary M, VERGHESE, Simon, SHAVER, David C, DUERR, Erik K, MCINTOSH, K. Alex, DAULER, Eric A, OAKLEY, Douglas C, GROVES, Steven H, VINEIS, Christopher J, MAHONEY, Leonard J, MOLVAR, Karen M

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Recent progress in GaInAsSb thermophotovoltaics grown by organometallic vapor-phase epitaxy by Wang, C.A., Choi, H.K., Oakley, D.C., Charache, G.W.

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Arrays of InP-based Avalanche Photodiodes for Photon Counting by Verghese, Simon, Hopman, Pablo I., Shaver, David C., Aull, Brian F., Aversa, Joseph C., Frechette, Jonathan P., Glettler, James B., Liau, Zong Long, Mahan, Joseph M., Mahoney, Leonard J., Molvar, Karen M., Donnelly, Joseph P., O'Donnell, Frederick J., Oakley, Douglas C., Ouellette, Edward J., Renzi, Matthew J., Tyrrell, Brian M., Duerr, Erik K., McIntosh, K. Alex, Chapman, David C., Vineis, Christopher J., Smith, Gary M., Funk, Joseph E., Jensen, Katharine Estelle

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Wafer-scale 3D integration of InGaAs photodiode arrays with Si readout circuits by oxide bonding and through-oxide vias by Chen, C.L., Yost, D.-R., Knecht, J.M., Wey, J., Chapman, D.C., Oakley, D.C., Soares, A.M., Mahoney, L.J., Donnelly, J.P., Chen, C.K., Suntharalingam, V., Berger, R., Hu, W., Wheeler, B.D., Keast, C.L., Shaver, D.C.

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Growth and characterization of GaInAsP/InP-based Geiger-mode avalanche photodiodes by Chapman, D.C., Vineis, C.J., Oakley, D.C., Napoleone, A., Smith, G.M., Duerr, E.K., Jensen, K.E., Donnelly, J.P., McIntosh, K.A., Verghese, S.

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Design Considerations for 1.06- mum InGaAsP-InP Geiger-Mode Avalanche Photodiodes by Donnelly, J.P., Duerr, E.K., McIntosh, K.A., Dauler, E.A., Oakley, D.C., Groves, S.H., Vineis, C.J., Mahoney, L.J., Molvar, K.M., Hopman, P.I., Jensen, K.E., Smith, G.M., Verghese, S., Shaver, D.C.

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Design considerations for 1.06-[mu]m InGaAsP-InP Geiger-mode avalanche photodiodes by Donnelly, J.P, Duerr, E.K, McIntosh, K.A, Dauler, E.A, Oakley, D.C, Groves, S.H, Vineis, C.J, Mahoney, L.J, Molvar, K.M, Hopman, P.I, Jensen, K.E, Smith, G.M, Verghese, S, Shaver, D.C

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Integration using the hybrid silicon platform by Bowers, J.E., Hui-Wen Chen, Di Liang, Oakley, D.C., Napoleone, A., Chapman, D.C., Chang-Lee Chen, Juodawlkis, P.W.

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Reliable large format arrays of Geiger-mode avalanche photodiodes by Smith, G.M., Donnelly, J.P., McIntosh, K.A., Duerr, E.K., Shaver, D.C., Verghese, S., Funk, J.E., Mahoney, L.J., Molvar, K.M., Chapman, D.C., Oakley, D.C.

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Predicting afterpulsing in free-running, Geiger-mode avalanche photodiodes at 1.06 μm wavelength by Jensen, K.E., Hopman, P.I., Duerr, E.K., Dauler, E.A., Donnelly, J.P., Groves, S.H., Mahoney, L.J., McIntosh, K.A., Molvar, K.M., Napoleone, A., Oakley, D.C., Shaver, D.C., Verghese, S., Vineis, C.J., Younger, R.D.

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Design and reliability of mesa-etched InP-based Geiger-mode avalanche photodiodes by Smith, G.M., Donnelly, J.P., McIntosh, K.A., Duerr, E.K., Vineis, C.J., Shaver, D.C., Verghese, S., Funk, J.E., Mahan, J.M., Hopman, P.I., Mahoney, L.J., Molvar, K.M., O'Donnell, F.J., Oakley, D.C., Ray, K.G.

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Geiger-mode avalanche photodiodes for photon-counting communications by Verghese, S., Cohen, D.M., Dauler, E.A., Donnelly, J.P., Duerr, E.K., Groves, S.H., Hopman, P.I., Jensen, K.E., Liau, Z.-L., Mahoney, L.J., McIntosh, K.A., Oakley, D.C., Smith, G.M.

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Geiger-mode avalanche photodiodes for laser communications and laser radar by Aull, B.F., Aversa, J.C., Dauler, E.A., Donnelly, J.P., Duerr, E.K., Frechette, J.P., Funk, J.E., Groves, S.H., Hopman, P.I., Jensen, K.E., Liau, Z.-L., Mahan, J.M., Mahoney, L.J., McIntosh, K.A., Napoleone, A., Oakley, D.C., Ouellette, E.J., Shaver, D.C., Smith, G.M., Verghese, S., Vineis, C.J.

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In situ Raman spectroscopic characterization of compound semiconductor free carrier concentration by Maslar, J.E., Wang, C.A., Oakley, D.C.

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Wafer-scale 3D integration of InGaAs image sensors with Si readout circuits by Chen, C.L., Yost, D.-R., Knecht, J.M., Chapman, D.C., Oakley, D.C., Mahoney, L.J., Donnelly, J.P., Soares, A.M., Suntharalingam, V., Berger, R., Bolkhovsky, V., Hu, W., Wheeler, B.D., Keast, C.L., Shaver, D.C.

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Performance of Reliable Mesa-Etched InP-based Geiger-Mode Avalanche Photodiodes and Arrays by Smith, G.M., Donnelly, J.P., Mcintosh, K.A., Duerr, E.K., Shaver, D.C., Verghese, S., Funk, J.E., Kumar, N.R., Mahoney, L.J., Molvar, K.M., O'Donnell, F.J., Chapman, D.C., Oakley, D.C., Ray, K.G.

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Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning by Swint, R.B., Juodawlkis, P.W., Oakley, D.C., Napoleone, A., Vineis, C.J., Chludzinski, J.W., Turner, G.W., Twichell, J.C., Bloomstein, T.M., Cann, S.G., Efremow, N.N., Hardy, D.E., Marchant, M.F., Rothschild, M.

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Development of Geiger-mode APD arrays for 1.06 /spl mu/m by McIntosh, K.A., Donnelly, J.P., Oakley, D.C., Napoleone, A., Calawa, S.D., Mahoney, L.J., Molvar, K.M., Duerr, E.K., Shaver, D.C.

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Absorption saturation nonlinearity in InGaAs/InP p-i-n photodiodes by Juodawlkis, P.W., O'Donnell, F.J., Hargreaves, J.J., Oakley, D.C., Napoleone, A., Groves, S.H., Mahoney, L.J., Molvar, K.M., Missaggia, L.J., Donnelly, J.P., Williamson, R.C., Twichell, J.C.

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